BCP56-10 datasheet, PDF - EEWORLD Datasheet

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BCP56-10: DescriptionPower Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size42KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BCP56-10 Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

BCP56-10 Parametric

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCP53

BCP56

BCP56 10

BCP56 16

Not Recommended for New Design

Please Use FZT493

BCP56

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

100

1.5

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

MIN.

100

0.5

1.0

100

250

100

160

125

160

250

MHz

TYP.

MAX.

UNIT

CONDITIONS.

=100

= 10mA *

=10

=30V

=30V, T

amb

=150°C

=5V

=500mA, I

=50mA*

=500mA, V

=2V*

=150mA,

=500mA,

=150mA,

=2V*

Emitter Cut-Off Current I

EBO

CE(sat)

BE(on)

Static Forward Current h

Transfer Ratio

BCP56-10

BCP56-16

Transition Frequency

=50mA, V

=10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

3 - 18

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