HS-26CT32RH-T
Data Sheet
July 1999
File Number
4593.1
Radiation Hardened
Quad Differential Line Receiver
Intersil’s Satellite Applications
(SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-26CT32RH-T is a Quad Differential Line
Receiver designed for digital data transmission over
balanced lines and meets the requirements of EIA Standard
RS-422. Radiation Hardened CMOS processing assures low
power consumption, high speed, and reliable operation in
the most severe radiation environments.
The HS-26CT32RH-T has an input sensitivity of 200mV (typ.)
over the common mode input voltage range of
±7V.
The
receivers are also equipped with input fail safe circuitry, which
causes the outputs to go to a logic “1” when the inputs are
open. TTL compatible Enable and Disable functions are
common to all four receivers.
Flow
TM
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . 1 x 10
5
RAD(Si)
- SEU and SEL . . . . . . . . . . Immune to 100MeV/mg/cm
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• EIA RS-422 Compatible Inputs
• TTL Compatible Enable Inputs
• Input Fail Safe Circuitry
• High Impedance Inputs when Disabled or Powered Down
• Low Power Dissipation 138mW Standby (Max)
• Single 5V Supply
• Full -55
o
C to 125
o
C Military Temperature Range
Pinouts
HS1-26CT32RH-T (SBDIP) CDIP2-T16
TOP VIEW
AIN 1
16 V
DD
15 BIN
14 BIN
13 BOUT
12 ENABLE
11 DOUT
10 DIN
9 DIN
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-26CT32RH-T
are contained in SMD 5962-95631.
A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
AIN 2
AOUT 3
ENABLE 4
COUT 5
CIN 6
CIN 7
GND 8
HS9-26CT32RH-T (FLATPACK), CDFP4-F16
TOP VIEW
Ordering Information
ORDERING
NUMBER
5962R9563101TEC
HS1-26CT32RH/Proto
5962R9563101TXC
HS9-26CT32RH/Proto
PART
NUMBER
HS1-26CT32RH-T
HS1-26CT32RH/Proto
HS9-26CT32RH-T
HS9-26CT32RH/Proto
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
AIN
AIN
AOUT
ENABLE
COUT
CIN
CIN
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
BIN
BIN
BOUT
ENABLE
DOUT
DIN
DIN
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-26CT32RH-T
Die Characteristics
DIE DIMENSIONS:
2140µm x 3290µm x 533µm
±25.4µm
(85 x 130 x 21mils
±1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800
Å
M2: Al/Si/Cu
Thickness: 10k
Å
±1k
Å
SUBSTRATE POTENTIAL:
Internally connected to V
DD
. May be left floating.
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO
2
Thickness: 8k
Å
±1k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
315
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26CT32RH-T
AIN
(1)
V
DD
(16)
BIN
(15)
AIN (2)
(14) BIN
AOUT (3)
(13) BOUT
ENAB (4)
(12) ENAB
COUT (5)
(11) DOUT
CIN (6)
(10) DIN
(7)
CIN
(8)
GND
(9)
DIN
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
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