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2N1358

Description
Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,1 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric Compare View All

2N1358 Overview

Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN

2N1358 Parametric

Parameter NameAttribute value
Parts packaging codeTO-36
package instructionTO-36, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-36
JESD-30 codeO-MBPM-D2
Number of components1
Number of terminals2
Maximum operating temperature95 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationBOTTOM
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)0.1 MHz
Base Number Matches1
germanium power transistors
153
PNP ALLOY TRANSISTORS (Up to 65 Amp)
TfPE
NU~'BERS
RATED
BREAKDOWN
VOLTAGES
Vca
VCE
-50
-70
-40
-45
-40
-45
-50
-70
-80
-70
-80
-50
-30
-40
-50
-80
-70
-50
-40
-80
-70
-50
-40
-60
-50
-70
h'e
VCE
=
-2.0V
Min.
·35
25
35
35
20
20
20
35
25
25
25
17
50
50
50
20
20
20
20
35
35
35
35
20
35
25
Max.
70
70
70
70
40
40
40
70
50
50
50
40
100
100
100
40
40
40
40
70
70
70
70
40
70
50
Ic
(Amps)
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
TYPE
NUMBERS
RATED
BREAKDOWN
VOLTAGES
Vca
VCE
-40
-60
-45
-60
-75
-45
-60
-75
-40
-60
-40
-60
-60
-45
-30
-30
-45
-60
-30
-45
-60
-60
-45
-30
hFE
VCE
=
-2.0V
Min.
15
15
25
25
25
40
40
40
17
17
25
25
15
15
15
15
15
15
15
15
15
15
15
15
Max.
60
60
-
-
-
-
Ic
(Amps)
-15
-15
-15
-15
-15
-15
-15
-15
-35
-35
-50
-50
-50
-50
-50
-60
-60
-60
-60
-60
-60
-65
-65
-65
2N 173
2N 174
2N 277
2N 278
2N441
2N442
2N443
2N 1099
2N 1100
2N 1358
2N 1412
2N 1970
2N 1980
2N 1981
2N 1982
2N 2075
2N 2076
2N 2077
2N 2078
2N 2079
2N 2080
2N 2081
2N 2082
2N 2490
2N 2491
2N 2492
-60
-80
-40
-50
-40
-50
-60
-80
-100
-80
-100
-100
-50
-70
-90
-80
-70
-50
-40
-80
-70
-50
-40
-70
-60
-80
2N 1518
2N 1519
2N 2152
2N 2153
2N 2154
2N 2156
2N 2157
2N 2158
2N 1520
2N 1521
2N 1522
2N 1523
SDT
1808
SDT
1809
SDT
1810
2N 4048
2N 4049
2N 4050
2N 4051
2N 4052
2N 4053
2N 2730
2N 2731
2N 2732
-50
-80
-45
-60
-75
-45
-60
-75
-50
-80
-50
-80
-80
-60
-40
-45
-60
-75
-45
-60
-75
-80
-60
-40
-
-
68
68
100
100
-
-
-
-
-
-
-
-
-
-
-
-
,
.
I
I
J~~_: :~
~
_57&
oeo
MAX
.470:
i1
OVOlA~1
TO-68
m
~~,
AND PIERCED TERMINALS
'--1
~
17'
EMITTER
.140011.. MAX
TO ORDER. SPECIFY FLATTENED
TO-36
This year Solitron offers an expanded line of Germanium PNP Power Transistors with current capabilities up
to 65 Amps. in the popular TO-36 and TO-68 packages. See Page 47 for additional types in the TO-3 case.

2N1358 Related Products

2N1358 2N1100 2N1412 2N174 2N2158 2N2156
Description Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 2 PIN Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN Power Bipolar Transistor, 30A I(C), 75V V(BR)CEO, 1-Element, PNP, Germanium, TO-68, Metal, 2 Pin, TO-68, 2 PIN Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Germanium, TO-68, Metal, 2 Pin, TO-68, 2 PIN
Parts packaging code TO-36 TO-36 TO-36 TO-36 TO-68 TO-68
package instruction TO-36, 3 PIN POST/STUD MOUNT, O-MBPM-D2 POST/STUD MOUNT, O-MBPM-D2 TO-36, 3 PIN POST/STUD MOUNT, O-MBPM-D2 POST/STUD MOUNT, O-MBPM-D2
Contacts 3 2 3 3 2 2
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 15 A 15 A 15 A 15 A 30 A 30 A
Collector-emitter maximum voltage 70 V 80 V 80 V 70 V 75 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25 35 40 40
JEDEC-95 code TO-36 TO-36 TO-36 TO-36 TO-68 TO-68
JESD-30 code O-MBPM-D2 O-MBPM-D2 O-MBPM-D2 O-MBPM-D2 O-MBPM-D2 O-MBPM-D2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 95 °C 95 °C 100 °C 95 °C 110 °C 110 °C
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 30 W 30 W 87 W 30 W 170 W 170 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials GERMANIUM GERMANIUM GERMANIUM GERMANIUM GERMANIUM GERMANIUM
Nominal transition frequency (fT) 0.1 MHz 0.01 MHz 0.01 MHz 0.01 MHz 0.002 MHz 0.002 MHz
Base Number Matches 1 1 1 1 1 1

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