2N174 datasheet, PDF - EEWORLD Datasheet

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2N174: DescriptionPower Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size59KB，1 Pages; ManufacturerSolitron Devices Inc.

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2N174 Overview

Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN

2N174 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-36
package instruction	TO-36, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	70 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-36
JESD-30 code	O-MBPM-D2
Number of components	1
Number of terminals	2
Maximum operating temperature	95 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	GERMANIUM
Nominal transition frequency (fT)	0.01 MHz
Base Number Matches	1

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germanium power transistors

153

PNP ALLOY TRANSISTORS (Up to 65 Amp)

TfPE

NU~'BERS

RATED

BREAKDOWN

VOLTAGES

Vca

VCE

-50

-70

-40

-45

-40

-45

-50

-70

-80

-70

-80

-50

-30

-40

-50

-80

-70

-50

-40

-80

-70

-50

-40

-60

-50

-70

h'e

VCE

-2.0V

Min.

·35

Max.

100

(Amps)

-5

TYPE

NUMBERS

RATED

BREAKDOWN

VOLTAGES

Vca

VCE

-40

-60

-45

-60

-75

-45

-60

-75

-40

-60

-40

-60

-45

-30

-45

-60

-30

-45

-60

-45

-30

hFE

VCE

-2.0V

Min.

Max.

(Amps)

-15

-35

-50

-60

-65

2N 173

2N 174

2N 277

2N 278

2N441

2N442

2N443

2N 1099

2N 1100

2N 1358

2N 1412

2N 1970

2N 1980

2N 1981

2N 1982

2N 2075

2N 2076

2N 2077

2N 2078

2N 2079

2N 2080

2N 2081

2N 2082

2N 2490

2N 2491

2N 2492

-60

-80

-40

-50

-40

-50

-60

-80

-100

-80

-100

-50

-70

-90

-80

-70

-50

-40

-80

-70

-50

-40

-70

-60

-80

2N 1518

2N 1519

2N 2152

2N 2153

2N 2154

2N 2156

2N 2157

2N 2158

2N 1520

2N 1521

2N 1522

2N 1523

SDT

1808

SDT

1809

SDT

1810

2N 4048

2N 4049

2N 4050

2N 4051

2N 4052

2N 4053

2N 2730

2N 2731

2N 2732

-50

-80

-45

-60

-75

-45

-60

-75

-50

-80

-50

-80

-60

-40

-45

-60

-75

-45

-60

-75

-80

-60

-40

100

J~~_: :~

_57&

oeo

MAX

.470:

OVOlA~1

TO-68

~~,

AND PIERCED TERMINALS

'--1

17'

EMITTER

.140011.. MAX

TO ORDER. SPECIFY FLATTENED

TO-36

This year Solitron offers an expanded line of Germanium PNP Power Transistors with current capabilities up

to 65 Amps. in the popular TO-36 and TO-68 packages. See Page 47 for additional types in the TO-3 case.

2N174 Related Products

	2N174	2N1100	2N1412	2N1358	2N2158	2N2156
Description	Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 2 PIN	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN	Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin, TO-36, 3 PIN	Power Bipolar Transistor, 30A I(C), 75V V(BR)CEO, 1-Element, PNP, Germanium, TO-68, Metal, 2 Pin, TO-68, 2 PIN	Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Germanium, TO-68, Metal, 2 Pin, TO-68, 2 PIN
Parts packaging code	TO-36	TO-36	TO-36	TO-36	TO-68	TO-68
package instruction	TO-36, 3 PIN	POST/STUD MOUNT, O-MBPM-D2	POST/STUD MOUNT, O-MBPM-D2	TO-36, 3 PIN	POST/STUD MOUNT, O-MBPM-D2	POST/STUD MOUNT, O-MBPM-D2
Contacts	3	2	3	3	2	2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	15 A	15 A	15 A	15 A	30 A	30 A
Collector-emitter maximum voltage	70 V	80 V	80 V	70 V	75 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	25	25	25	40	40
JEDEC-95 code	TO-36	TO-36	TO-36	TO-36	TO-68	TO-68
JESD-30 code	O-MBPM-D2	O-MBPM-D2	O-MBPM-D2	O-MBPM-D2	O-MBPM-D2	O-MBPM-D2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	95 °C	95 °C	100 °C	95 °C	110 °C	110 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	30 W	30 W	87 W	30 W	170 W	170 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	GERMANIUM	GERMANIUM	GERMANIUM	GERMANIUM	GERMANIUM	GERMANIUM
Nominal transition frequency (fT)	0.01 MHz	0.01 MHz	0.01 MHz	0.1 MHz	0.002 MHz	0.002 MHz
Base Number Matches	1	1	1	1	1	1

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