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Datasheet> All Categories > semiconductor> Discrete semiconductor> TIP30B
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TIP30B

Description
1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size153KB，3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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TIP30B Overview

1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB

TIP30B Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage80 V
Number of terminals3
Processing package descriptionTO-220, 3 PIN
stateActive
structureSINGLE
Minimum DC amplification factor15
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
larity_channel_typePNP
wer_dissipation_max__abs_30 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Rated crossover frequency3 MHz

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Download Datasheet
MCC
Micro Commercial Components
TM
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
TIP29,A,B,C(NPN)
TIP30,A,B,C(PNP)
1.0 Amp
Complementary
Silicon Power
Transistors
Features
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Marking: Type Number
•
R
th(jc)
is 4.167
O
C/W, R
th(ja)
is 62.5
O
C/W
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Rating
Collector-Emitter Voltage
Collector-Base Voltage
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
Rating
40
60
80
100
5.0
1.0
3.0
0.4
30
0.24
-55 to +150
-55 to +150
Max
Unit
V
V
A
A
W
W/
O
C
O
C
O
C
Units
K
F
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EB
I
C
I
B
P
D
T
J
,
T
STG
Symbol
TO-220
B
C
S
Q
T
A
U
1 2
H
3
Emitter-Base Voltage
Collector Current- Continuous
Peak
(1)
Base Current-Continuous
Total power dissipation @T
C
=25
O
C
Derate above 25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Sustaining Voltage
(note
2)
(I
C
=30mAdc, I
B
=0)
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
Emitter-Base Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
Collector Cutoff Current
(V
CE
=40V, V
EB
=0)
TIP29, TIP30
(V
CE
=60V, V
EB
=0)
TIP29A, TIP30A
(V
CE
=80V, V
EB
=0)
TIP29B, TIP30B
(V
CE
=100V, V
EB
=0)
TIP29C, TIP30C
Collector Cutoff Current
(V
CE
=30Vdc, I
B
=0)
TIP29, TIP29A, TIP30, TIP30A
(V
CE
=60Vdc, I
B
=0)
TIP29B, TIP29C, TIP30B, TIP30C
Min
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(SUS)
40
60
80
100
---
---
---
---
---
1.0
Vdc
L
V
D
G
N
J
R
I
EBO
I
CES
mAdc
---
---
---
---
---
---
200
200
200
200
0.3
0.3
uAdc
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
I
CEO
mAdc
ON CHARACTERISTICS
(2)
DC Current Gain
(I
C
=0.2Adc, V
CE
=4.0Vdc)
40
---
----
(I
C
=1.0Adc, V
CE
=4.0Vdc)
15
75
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=1.0Adc, I
B
=125mAdc)
---
0.7
Vdc
V
BE(ON)
Base-Emitter On Voltage
Vdc
(I
C
=1.0Adc,V
CE
=4.0Adc)
---
1.3
f
T
Current-Gain-Bandwidth Product
(note
3)
3.0
---
MH
Z
(I
C
=200mAdc, V
CE
=10Vdc,
f=1.0MH
Z
)
h
fe
Small-Signal Current Gain
20
---
---
(I
C
=0.2Adc, V
CE
=10Vdc, f=1.0KHz )
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.
Pulse Test: Pulse Width=300us, Duty Cycle <2.0%
3.
f
T
=| h
fe
| x f
test
h
FE(1)
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
∅
Revision:
3
www.mccsemi.com
1 of 3
2008/01/01

TIP30B Related Products

TIP30B TIP29-BP TIP29A-BP TIP29B-BP TIP30A-BP TIP30A TIP30B-BP TIP30C TIP30C-BP
Description 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 1 A, 40 V, NPN, Si, POWER TRANSISTOR 1 A, 40 V, NPN, Si, POWER TRANSISTOR 1 A, 40 V, NPN, Si, POWER TRANSISTOR 1 A, 40 V, NPN, Si, POWER TRANSISTOR POWER TRANSISTOR 1 A, 40 V, NPN, Si, POWER TRANSISTOR 1 A, PNP, Si, POWER TRANSISTOR, TO-220AB 1 A, 40 V, NPN, Si, POWER TRANSISTOR
state Active TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED ACTIVE TRANSFERRED ACTIVE TRANSFERRED
Maximum collector current 1 A 1 A 1 A 1 A 1 A - 1 A 1 A 1 A
Maximum Collector-Emitter Voltage 80 V 40 V 40 V 40 V 40 V - 40 V - 40 V
Number of terminals 3 3 3 3 3 - 3 3 3
Processing package description TO-220, 3 PIN Plastic, TO-220, 3 PIN Plastic, TO-220, 3 PIN Plastic, TO-220, 3 PIN Plastic, TO-220, 3 PIN - Plastic, TO-220, 3 PIN TO-220, 3 PIN Plastic, TO-220, 3 PIN
Minimum DC amplification factor 15 15 15 15 15 - 15 15 15
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
packaging shape RECTANGULAR Rectangle Rectangle Rectangle Rectangle - Rectangle RECTANGULAR Rectangle
Package Size FLANGE MOUNT Flange mounting Flange mounting Flange mounting Flange mounting - Flange mounting FLANGE MOUNT Flange mounting
Terminal form THROUGH-HOLE THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole - THROUGH-hole THROUGH-HOLE THROUGH-hole
Terminal location SINGLE single single single single - single SINGLE single
Transistor component materials SILICON silicon silicon silicon silicon - silicon SILICON silicon
Transistor polarity - NPN NPN NPN NPN - NPN PNP NPN
terminal coating - tin lead tin lead tin lead tin lead - tin lead MATTE TIN tin lead
Maximum ambient power consumption - 30 W 30 W 30 W 30 W - 30 W 30 W 30 W
Transistor type - universal power supply universal power supply universal power supply universal power supply GENERAL PURPOSE POWER universal power supply GENERAL PURPOSE POWER universal power supply

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