TIP30C-BP datasheet, PDF - EEWORLD Datasheet

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TIP30C-BP: Description1 A, 40 V, NPN, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size153KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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TIP30C-BP Overview

1 A, 40 V, NPN, Si, POWER TRANSISTOR

TIP30C-BP Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	40 V
Processing package description	Plastic, TO-220, 3 PIN
state	TRANSFERRED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
Transistor component materials	silicon
Maximum ambient power consumption	30 W
Transistor type	universal power supply
Minimum DC amplification factor	15

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MCC

Micro Commercial Components

omponents

20736

Marilla

Street Chatsworth

!"#

$ % !"#

TIP29,A,B,C(NPN)

TIP30,A,B,C(PNP)

1.0 Amp

Complementary

Silicon Power

Transistors

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Marking: Type Number

•

th(jc)

is 4.167

C/W, R

th(ja)

is 62.5

C/W

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Rating

Collector-Emitter Voltage

Collector-Base Voltage

TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

Rating

100

5.0

1.0

3.0

0.4

0.24

-55 to +150

Max

Unit

Units

Maximum Ratings

Symbol

CEO

CBO

STG

Symbol

TO-220

1 2

Emitter-Base Voltage

Collector Current- Continuous

Peak

(1)

Base Current-Continuous

Total power dissipation @T

=25

Derate above 25

Junction Temperature

Storage Temperature

Parameter

Collector-Emitter Sustaining Voltage

(note

=30mAdc, I

=0)

TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

Emitter-Base Cutoff Current

=5.0Vdc, I

=0)

Collector Cutoff Current

=40V, V

=0)

TIP29, TIP30

=60V, V

=0)

TIP29A, TIP30A

=80V, V

=0)

TIP29B, TIP30B

=100V, V

=0)

TIP29C, TIP30C

Collector Cutoff Current

=30Vdc, I

=0)

TIP29, TIP29A, TIP30, TIP30A

=60Vdc, I

=0)

TIP29B, TIP29C, TIP30B, TIP30C

Min

Electrical Characteristics @ 25

C Unless Otherwise Specified

OFF CHARACTERISTICS

CEO(SUS)

100

---

1.0

Vdc

EBO

CES

mAdc

---

200

0.3

uAdc

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

CEO

mAdc

ON CHARACTERISTICS

(2)

DC Current Gain

=0.2Adc, V

=4.0Vdc)

---

----

=1.0Adc, V

=4.0Vdc)

CE(sat)

Collector-Emitter Saturation Voltage

=1.0Adc, I

=125mAdc)

---

0.7

Vdc

BE(ON)

Base-Emitter On Voltage

Vdc

=1.0Adc,V

=4.0Adc)

---

1.3

Current-Gain-Bandwidth Product

(note

3.0

---

=200mAdc, V

=10Vdc,

f=1.0MH

)

Small-Signal Current Gain

---

=0.2Adc, V

=10Vdc, f=1.0KHz )

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

Pulse Test: Pulse Width=300us, Duty Cycle <2.0%

=| h

| x f

test

FE(1)

DIM

DIMENSIONS

INCHES

MIN

MAX

MIN

MAX

.560

.625

14.22

15.88

.380

.420

9.65

10.67

.140

.190

3.56

4.82

.020

.139

.190

---

.012

.500

.045

.190

.100

.080

.045

.230

-----

.045

.161

.110

.250

.025

.580

.060

.210

.135

.115

.055

.270

.050

-----

0.51

3.53

2.29

---

0.30

12.70

1.14

4.83

2.54

2.04

1.14

5.84

-----

1.15

1.14

4.09

2.79

6.35

0.64

14.73

1.52

5.33

3.43

2.92

1.39

6.86

1.27

-----

NOTE

∅

Revision:

www.mccsemi.com

1 of 3

2008/01/01

TIP30C-BP Related Products

	TIP30C-BP	TIP29-BP	TIP29A-BP	TIP29B-BP	TIP30A-BP	TIP30A	TIP30B	TIP30B-BP	TIP30C
Description	1 A, 40 V, NPN, Si, POWER TRANSISTOR	1 A, 40 V, NPN, Si, POWER TRANSISTOR	1 A, 40 V, NPN, Si, POWER TRANSISTOR	1 A, 40 V, NPN, Si, POWER TRANSISTOR	1 A, 40 V, NPN, Si, POWER TRANSISTOR	POWER TRANSISTOR	1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB	1 A, 40 V, NPN, Si, POWER TRANSISTOR	1 A, PNP, Si, POWER TRANSISTOR, TO-220AB
state	TRANSFERRED	TRANSFERRED	TRANSFERRED	TRANSFERRED	TRANSFERRED	ACTIVE	Active	TRANSFERRED	ACTIVE
Number of terminals	3	3	3	3	3	-	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN	NPN	-	-	NPN	PNP
Maximum collector current	1 A	1 A	1 A	1 A	1 A	-	1 A	1 A	1 A
Maximum Collector-Emitter Voltage	40 V	40 V	40 V	40 V	40 V	-	80 V	40 V	-
Processing package description	Plastic, TO-220, 3 PIN	Plastic, TO-220, 3 PIN	Plastic, TO-220, 3 PIN	Plastic, TO-220, 3 PIN	Plastic, TO-220, 3 PIN	-	TO-220, 3 PIN	Plastic, TO-220, 3 PIN	TO-220, 3 PIN
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	-	RECTANGULAR	Rectangle	RECTANGULAR
Package Size	Flange mounting	Flange mounting	Flange mounting	Flange mounting	Flange mounting	-	FLANGE MOUNT	Flange mounting	FLANGE MOUNT
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	-	THROUGH-HOLE	THROUGH-hole	THROUGH-HOLE
terminal coating	tin lead	tin lead	tin lead	tin lead	tin lead	-	-	tin lead	MATTE TIN
Terminal location	single	single	single	single	single	-	SINGLE	single	SINGLE
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	PLASTIC/EPOXY	Plastic/Epoxy	PLASTIC/EPOXY
Transistor component materials	silicon	silicon	silicon	silicon	silicon	-	SILICON	silicon	SILICON
Maximum ambient power consumption	30 W	30 W	30 W	30 W	30 W	-	-	30 W	30 W
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply	universal power supply	GENERAL PURPOSE POWER	-	universal power supply	GENERAL PURPOSE POWER
Minimum DC amplification factor	15	15	15	15	15	-	15	15	15

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