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SML30EUZ03B

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, TO-247,
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

SML30EUZ03B Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, TO-247,

SML30EUZ03B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.045 µs
surface mountNO
technologyAVALANCHE
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
SML30EUZ03B
Enhanced Ultrafast
Recovery Diode
300 Volt, 30Amp
Back of Case
Cathode
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery diode
features a triple charge control action utilising Semelab’s
Graded Buffer Zone technology combined with low emitter
efficiency and local lifetime control techniques.
SML
30EUZ03B
1 - Cathode
2 - Anode
BENEFITS
• Very fast recovery for low switching losses
• Ultra soft recovery with low EMI generation
1
2
• High dynamic ruggedness under all conditions
• Low temperature dependency
• Low on-state losses with positive temperature coefficient
• Stable blocking voltage and low leakage current
• Avalanche rated for high reliability circuit operation
See Package outline for mechanical data and more details
TO247 Package
Key Parameters
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
300V
1.8V
30A
35nS
APPLICATIONS
• Freewheeling Diode for IGBTs and MOSFETs
• Uninterruptible Power Supplies UPS
• Switch Mode Power Upplies SMPS
• Inverse and Clamping Diode
• Snubber Diode
• Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
J
,T
STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current(10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy(L=40mH)
Operating & Storage Junction Temperature
300V
300V
30A
75A
300A
60W
20mJ
-55 to 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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