EEWORLDEEWORLDEEWORLD

Part Number

Search

NTB5411N

Description
80 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size136KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NTB5411N Overview

80 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

NTB5411N Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage60 V
Processing package descriptionLead FREE, CASE 418B-04, D2PAK-3
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current80 A
Rated avalanche energy280 mJ
Maximum drain on-resistance0.0100 ohm
Maximum leakage current pulse185 A
NTB5411N, NTP5411N
Power MOSFET
80 Amps, 60 Volts
N-Channel D
2
PAK, TO-220
Features
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
LED Lighting and LED Backlight Drivers
DC−DC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
Parameter
Symbol
V
DSS
V
GS
V
GS
I
D
Value
60
$20
$30
80
61
P
D
I
DM
T
J
, T
stg
I
S
E
AS
166
185
−55
to
175
75
280
W
A
°C
A
mJ
Unit
V
V
V
A
http://onsemi.com
I
D
MAX
(Note 1)
80 A
V
(BR)DSS
60 V
R
DS(ON)
MAX
10 mW @ 10 V
Applications
N−Channel
D
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
3
D
2
PAK
CASE 418B
STYLE 2
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Gate−to−Source Voltage
Nonrepetitive
(T
P
< 10
ms)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
t
p
= 10
ms
1
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V
dc
, I
L(pk)
= 75 A,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
T
L
260
°C
NTP
5411NG
AYWW
1
Gate
2
Drain
3
Source
1
Gate
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
(Note 1)
Symbol
R
qJC
R
qJA
Max
0.9
43
Unit
°C/W
NTB
5411NG
AYWW
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
October, 2009
Rev. 2
1
Publication Order Number:
NTB5411N/D
[Digging Power] TOP series switching power supply + LM317 adjustable output
Still made with TOP series First, the TOP is made into a fixed output of 15V, and then the output voltage is adjusted by LM317....
蓝雨夜 Analogue and Mixed Signal
Fatfs Classic Data
...
qin552011373 Embedded System
TI Power Design Tips 23
Welcome to Power Design Tips! With the emphasis on the need for more efficient and lower cost power solutions, we have created this column to provide helpful tips on a variety of power management topi...
trevor Analogue and Mixed Signal
Please help me find the USB driver problem!
I have learned some knowledge about drivers, and my goal is to implement a driver for USB disk filtering. At present, I can understand the general meaning of each code by reading it separately, but I ...
yangguang001 Embedded System
How to implement the unified clock system UCS for MSP430F5529 Part 2
Experiment 2: Configure MCLK and SMCLK as XT1 (XT1 of F5529 is 32.768KHZ) /*1. Configure IO ports 5.4 and 5.5 as XT1 function. */[/color][/size][/font][/align][align=left][font=Verdana, Arial, Helveti...
fish001 Microcontroller MCU
What are "Four Remote Controls" and "Intelligent Power Distribution System"?
[size=3] With the development of my country's electrical automation technology and the needs of power construction in various places, the "four remote" monitoring system originally used in the field o...
心仪 Industrial Control Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2120  1272  1845  2038  2701  43  26  38  42  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号