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NTD4804N

Description
14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size90KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTD4804N Overview

14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET

NTD4804N Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage30 V
Processing package descriptionLead FREE, CASE 369C-01, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current14.5 A
Rated avalanche energy450 mJ
Maximum drain on-resistance0.0055 ohm
Maximum leakage current pulse230 A
NTD4804N, NVD4804N
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified − NVD4804N
These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V
(BR)DSS
30 V
R
DS(on)
MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
D
I
D
MAX
117 A
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
19.6
15.2
2.66
14.5
11
1.43
124
96
107
230
45
−55 to
175
78
6.0
450
W
A
A
°C
A
V/ns
mJ
4
Drain
AYWW
48
04NG
W
A
W
1 2
A
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
Unit
V
V
A
4
G
N−Channel
S
4
1
3
CASE 369AD
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
48
04NG
4
Drain
AYWW
48
04NG
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 30 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
= Assembly Location
Y
= Year
WW
= Work Week
4804N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 10
Publication Order Number:
NTD4804N/D

NTD4804N Related Products

NTD4804N NVD4804NT4G-VF01 NTD4804NT4G
Description 14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET MOSFET N-CH 30V 14A DPAK Single N-Channel Power MOSFET 30V, 117A, 4mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Number of terminals 2 - 2
surface mount Yes - YES
Terminal form GULL WING - GULL WING
Terminal location single - SINGLE
Shell connection DRAIN - DRAIN
Number of components 1 - 1
transistor applications switch - SWITCHING
Transistor component materials silicon - SILICON
Brand Name - ON Semiconductor onsemi
Is it lead-free? - Lead free Lead free
Manufacturer packaging code - 369AA 369AA
Reach Compliance Code - not_compliant not_compliant
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Terminal surface - Tin (Sn) Matte Tin (Sn) - annealed
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