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HSA1015Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HSA1015Y Overview

Transistor

HSA1015Y Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
surface mountNO
Nominal transition frequency (fT)80 MHz
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6512
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 1/4
HSA1015
PNP Epitaxial Planar Transistor
Description
The HSA1015 is designed for use in driver stage of AF amplifier and general purpose
amplification.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150
°C
Junction Temperature ..................................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) .................................................................................................................................. 400 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ............................................................................................................................................ -50 V
V
CEO
Collector to Emitter Voltage......................................................................................................................................... -50 V
V
EBO
Emitter to Base Voltage ................................................................................................................................................. -5 V
I
C
Collector Current ........................................................................................................................................................ -150 mA
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
-50
-50
-5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-300
-1.1
400
-
-
7
Unit
V
V
V
nA
nA
mV
V
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
Test Conditions
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
MHz
pF
V
CE
=-10V, I
C
=-1mA, f=100MHz
V
CB
=-10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of h
FE1
Rank
Range
Y
120-240
GR(G)
200-400
HSA1015
HSMC Product Specification

HSA1015Y Related Products

HSA1015Y HSA1015GR
Description Transistor Transistor
Maker HSMC HSMC
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.15 A 0.15 A
Configuration Single Single
Minimum DC current gain (hFE) 120 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.4 W 0.4 W
surface mount NO NO
Nominal transition frequency (fT) 80 MHz 80 MHz

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