NTD78N03R
Power MOSFET
Features
25 V, 85 A, Single N−Channel, DPAK
•
Low R
DS(on)
to Minimize Conduction Losses
•
Optimized Gate Charge to Minimize Switching Losses
•
Pb−Free Packages are Available
Applications
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V
(BR)DSS
25 V
R
DS(on)
TYP
5.0 @ 11.5 V
7.5 @ 4.5 V
D
I
D
MAX
85 A
•
VCORE Applications
•
DC−DC Converters
•
Optimized for Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
Power Dissipation
(R
qJC
)
Pulsed Drain Current
Current Limited by Package
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
25
"20
14.7
11.4
2.3
11.3
8.8
1.4
85
66
76.9
98
32
−55
to
175
77
8.0
75
W
A
A
°C
A
V/ns
mJ
W
A
W
Unit
V
V
A
G
S
4
4
N−Channel
4
A
1 2
3
1
1
2
2 3
CASE 369C
DPAK
(Bend Lead)
STYLE 2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
CASE 369AC
3 IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
78
N03RG
3
Source
1
Gate
Y
= Year
WW
= Work Week
78N03R= Device Code
G
= Pb−Free Package
2
Drain
3
Source
Publication Order Number:
NTD78N03R/D
4
Drain
YWW
78
N03RG
1
Gate
2
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 5.0 mH, I
L
(pk) = 5.5 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 4
1
NTD78N03R
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 3)
Junction−to−Ambient
−
Steady State (Note 4)
Symbol
R
qJC
R
qJA
R
qJA
Value
1.95
65
110
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
=
10V to 11.5 V
V
GS
= 4.5 V
Forward Transconductance
gFS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 10 A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
3.
4.
5.
6.
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/d
t
= 100 A/ms,
I
S
= 20 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
0.8
38
16.5
22
31
nC
1.0
V
ns
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A, R
G
= 2.5
W
11
75
18
17
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A
1794
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
882
373
19.4
0.8
2.9
12.4
24
nC
pF
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
10
1.5
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
1.0
1.7
−5.3
5.0
4.9
7.5
7.2
23
3.0
V
mV/°C
5.8
5.7
9.0
8.5
mW
S
Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
Surface−mounted on FR4 board using the minimum recommended pad size.
Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
Switching characteristics are independent of operating junction temperatures.
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2
NTD78N03R
120
I
D
, DRAIN CURRENT (AMPS)
100
80
60
40
20
0
3V
2.6 V
2.4 V
0
1
2
3
4
5
6
7
8
9
10
10 V
T
J
= 25°C
6V
4.5 V
3.5 V
120
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 4 V
100
80
60
40
T
J
= 125°C
20
0
0
T
J
=
−55°C
1
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
V
DS
≥
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mΩ)
Figure 2. Transfer Characteristics
11.50
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.01
T
J
= 25°C
0.008
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.004
10.25
9.00
7.75
6.50
5.25
4.00
3
4
5
6
7
8
9
10
0.002
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
2
I
D
= 30 A
V
GS
= 10 V
to 11.5V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1000
T
J
= 100°C
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD78N03R
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3500
3000 C
iss
C, CAPACITANCE (pF)
2500
2000
1500
1000
500
0
20
C
rss
15
10
5
V
GS
0
V
DS
5
10
15
20
25
C
rss
C
oss
C
iss
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
5
4
3
2
1
0
Q
T
V
DS
Q
1
Q
2
V
GS
20
16
12
8
4
0
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
= 20 A
T
J
= 25°C
0
4
8
12
16
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
40
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 15 V
I
D
= 20 A
V
GS
= 4.5 V
35
30
25
20
15
10
5
0
0.3
0.6
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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4
NTD78N03R
ORDERING INFORMATION
Order Number
NTD78N03R
NTD78N03RG
NTD78N03RT4
NTD78N03RT4G
NTD78N03R−1
NTD78N03R−1G
NTD78N03R−35
NTD78N03R−35G
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK Straight Lead
DPAK Straight Lead
(Pb−Free)
DPAK Straight Lead
(3.5
"
0.15 mm)
DPAK Straight Lead
(3.5
"
0.15 mm)
(Pb−Free)
75 Units/Rail
2500 Tape & Reel
75 Units/Rail
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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