NTD78N03RT4 datasheet, PDF - EEWORLD Datasheet

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NTD78N03RT4: DescriptionPower MOSFET 25 V, 85 A, Single N−Channel, DPAK; CategoryDiscrete semiconductor The transistor; File Size206KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD78N03RT4 Overview

Power MOSFET 25 V, 85 A, Single N−Channel, DPAK

NTD78N03RT4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
package instruction	CASE 369C-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369C-01
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	75 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	85 A
Maximum drain current (ID)	11.3 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	76.9 W
Maximum pulsed drain current (IDM)	98 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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NTD78N03R

Power MOSFET

Features

25 V, 85 A, Single N−Channel, DPAK

•

Low R

DS(on)

to Minimize Conduction Losses

•

Optimized Gate Charge to Minimize Switching Losses

•

Pb−Free Packages are Available

Applications

http://onsemi.com

(BR)DSS

25 V

DS(on)

TYP

5.0 @ 11.5 V

7.5 @ 4.5 V

MAX

85 A

•

VCORE Applications

•

DC−DC Converters

•

Optimized for Low Side Switching

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (R

qJA

) (Note 1)

Power Dissipation

qJA

) (Note 1)

Continuous Drain

Current (R

qJA

) (Note 2)

Power Dissipation

qJA

) (Note 2)

Continuous Drain

Current (R

qJC

)

Power Dissipation

qJC

)

Pulsed Drain Current

Current Limited by Package

Steady

State

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 10

= 25°C

DmaxPkg

, T

stg

dV/dt

Symbol

DSS

Value

"20

14.7

11.4

2.3

11.3

8.8

1.4

76.9

−55

175

8.0

°C

V/ns

Unit

N−Channel

1 2

2 3

CASE 369C

DPAK

(Bend Lead)

STYLE 2

CASE 369D

DPAK

(Straight Lead)

STYLE 2

CASE 369AC

3 IPAK

(Straight Lead)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

YWW

N03RG

Source

Gate

= Year

= Work Week

78N03R= Device Code

= Pb−Free Package

Drain

Source

Publication Order Number:

NTD78N03R/D

Drain

YWW

N03RG

Gate

Drain

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (V

= 24 V, V

= 10 V,

L = 5.0 mH, I

(pk) = 5.5 A, R

= 25

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2006

August, 2006

−

Rev. 4

NTD78N03RT4 Related Products

	NTD78N03RT4	NTD78N03R-1	NTD78N03R-35	NTD78N03RT4G
Description	Power MOSFET 25 V, 85 A, Single N−Channel, DPAK	Power MOSFET 25 V, 85 A, Single N−Channel, DPAK	Power MOSFET 25 V, 85 A, Single N−Channel, DPAK	Power MOSFET 25 V, 85 A, Single N−Channel, DPAK
Is it Rohs certified?	incompatible	conform to	conform to	conform to
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
package instruction	CASE 369C-01, DPAK-3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	LEAD FREE, CASE 369C-01, DPAK-3
Contacts	3	3	3	3
Manufacturer packaging code	CASE 369C-01	CASE 369D-01	CASE 369D-01	CASE 369C-01
Reach Compliance Code	_compli	compli	compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
Avalanche Energy Efficiency Rating (Eas)	75 mJ	75 mJ	75 mJ	75 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V
Maximum drain current (Abs) (ID)	85 A	85 A	85 A	85 A
Maximum drain current (ID)	11.3 A	11.3 A	11.3 A	11.3 A
Maximum drain-source on-resistance	0.009 Ω	0.009 Ω	0.009 Ω	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	76.9 W	76.9 W	76.9 W	76.9 W
Maximum pulsed drain current (IDM)	98 A	98 A	98 A	98 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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