NTTFS4821N
Power MOSFET
Features
30 V, 57 A, Single N−Channel,
m8FL
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(on)
MAX
7.0 mW @ 10 V
10.8 mW @ 4.5 V
I
D
MAX
57 A
Applications
•
DC−DC Converters
•
High Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
13.5
9.7
2.1
18.6
13.4
4.1
7.5
5.4
0.66
57
41
38.5
171
−55
to
+150
38.5
6.0
55
W
A
°C
A
V/ns
mJ
W
A
W
A
W
A
1
N−Channel MOSFET
D (5−8)
Unit
V
V
A
G (4)
S (1,2,3)
MARKING DIAGRAM
1
S
S
S
G
4821
AYWWG
G
D
D
D
D
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
4821
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4821NTAG
NTTFS4821NTWG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 33 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 5
1
Publication Order Number:
NTTFS4821N/D
NTTFS4821N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3.25
58.3
188.4
30.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
1.9
6
5.8
5.7
8.8
8.6
53
2.5
V
mV/°C
V
GS
= 10 V to 11.5 V
V
GS
= 4.5 V
7.0
mW
10.8
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15 V, I
D
= 30 A
S
1300
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
300
150
10.5
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
1.3
3.9
4.5
V
GS
= 11.5 V, V
DS
= 15 V, I
D
= 20 A
24
1755
405
233
15
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
12
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
22
16
4.5
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4821N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V,
d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.5
20
23
2.8
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.9
0.78
9.0
6.5
2.5
1.7
nC
ns
1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.38
0.054
1.3
0.6
2.0
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4821N
TYPICAL CHARACTERISTICS
90
80
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
T
J
= 25°C
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
90
5.0 V
7.0 V
V
GS
= 4.5 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
I
D
, DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
0
T
J
= 100°C
T
J
= 25°C
1
2
T
J
=
−55°C
3
4
5
6
V
DS
≥
10 V
10 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
3
4
5
6
7
8
9
I
D
= 20 A
T
J
= 25°C
0.015
Figure 2. Transfer Characteristics
T
J
= 25°C
0.013
0.011
0.009
0.007
0.005
0.003
V
GS
= 10 V
V
GS
= 4.5 V
10
20
30
40
50
60
70
80
90
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
−50
10
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS4821N
TYPICAL CHARACTERISTICS
2000
1800
C, CAPACITANCE (pF)
1600
1400
1200
1000
800
600
400
200
0
0
C
rss
5
10
15
20
25
30
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
12
10
8
6
4
2
0
Q
gs
Q
gd
I
D
= 30 A
T
J
= 25°C
0
4
8
12
16
20
24
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
V
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
1000
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
10
I
S
, SOURCE CURRENT (A)
25
20
15
10
5
0
0.2
V
GS
= 0 V
T
J
= 25°C
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10
1
0.1
0.01
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
75
Figure 10. Diode Forward Voltage vs. Current
I
D
= 33 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
50
25
dc
100
0
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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