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NMC27C512ANE150

Description
IC 64K X 8 OTPROM, 150 ns, PDIP28, PLASTIC, DIP-28, Programmable ROM
Categorystorage    storage   
File Size306KB,9 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric

NMC27C512ANE150 Overview

IC 64K X 8 OTPROM, 150 ns, PDIP28, PLASTIC, DIP-28, Programmable ROM

NMC27C512ANE150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionDIP, DIP28,.6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time150 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length35.725 mm
memory density524288 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals28
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.334 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

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