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CDL13007B

Description
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size422KB,3 Pages
ManufacturerRectron
Environmental Compliance  
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CDL13007B Overview

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN

CDL13007B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)16
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
CDL13007
TO-220 PLASTIC PACKAGE
NPN PLASTIC POWER TRANSISTOR
Used in Energy Saving Lights and Power Switch Circuits
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation upto T
a
=25ºC
Power Dissipation upto T
c
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
j,
T
stg
VALUE
700
400
9
8
2
80
- 55 to +150
UNIT
V
V
V
A
W
W
ºC
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=700V, I
E
=0
Collector Cut Off Current
I
EBO
V
EB
=9V, I
C
=0
Emitter Cut Off Current
*h
FE
I
C
=2A, V
CE
=5V (Note1)
DC Current Gain
Ratio Between h
FE1
of Low Current and
h
FE1
I
C
=5mA, V
CE
=5V
h
FE1
/h
FE2
h
FE2
I
C
=2A, V
CE
=5V
h
FE2
of High Current
*V
CE (sat)
I
C
=5A, I
B
=1A
Collector Emitter Saturation Voltage
*V
BE (sat)
I
C
=5A, I
B
=1A
Base Emitter Saturation Voltage
f
T
V
CE
=10V, I
C
=500mA, f=1MHz
Transition Frequency
MIN
TYP
8
0.75
MAX
1.0
1.0
40
UNIT
mA
mA
1.5
1.5
4
V
V
MHz
Switching Time
DESCRIPTION
Fall Time
Storage Time
SYMBOL
t
f
t
s
TEST CONDITION
I
C
=2A, I
B1
= -1
B2
=0.4A
V
CC
=120V
MIN
TYP
MAX
0.8
3.6
UNIT
ms
ms
*h
FE
Classification
Marking
Product is pre-selected in DC Current
Gain (Groups A to E). RECTRON reserves the
right to ship any of the group(s) to
customers depending on production
availability.
XX=date code
*Pulse test t
p
<300m duty cycle <2%
m
s,
A : 08 - 17
CDL
13007A
XX
B : 16 - 25
CDL
13007B
XX
C : 24 - 33
CDL
13007C
XX
E : 32 - 40
CDL
13007E
XX

CDL13007B Related Products

CDL13007B CDL13007C CDL13007A CDL13007E CDL13007
Description Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Rectron Rectron Rectron Rectron Rectron
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction PLASTIC, TO-220, 3 PIN PLASTIC, TO-220, 3 PIN PLASTIC, TO-220, 3 PIN PLASTIC, TO-220, 3 PIN PLASTIC, TO-220, 3 PIN
Contacts 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 16 24 8 32 8
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3 e3 e3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 265 265 265 265 265
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz 4 MHz 4 MHz 4 MHz
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