2N2972 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2N2972

2N2972: DescriptionSmall Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-71, TO-71, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size108KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2N2972 Overview

Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-71, TO-71, 8 PIN

2N2972 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-71
package instruction	CYLINDRICAL, O-MBCY-W8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	45 V
Configuration	Single
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-71
JESD-30 code	O-MBCY-W8
JESD-609 code	e0
Number of terminals	8
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

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LOW-POWER SILICON NPN

Item

Number

Part Number

Manufacturer

V(BR)CEO

hFE

Max

(A)

(Hz)

Cobo

Max

(F)

ICBO

Max

(A)

V(BR)CBO

(V)

Max

(W)

Derate

(WrC)

Toper

Max

eC)

Package

Style

V(BR)CEO

2501199

2501424

2N997

2SC982TM

MMBT100

MMBT200

MMBT3642

MPSS545

BCWSSRH

BCWS8RG

BC817

BC1S7B

2N472

2N472A

2N2247

30 V, (Cont'd)

Matsushita

See Index

Indust Mexi

Natl Semi

CrimsonSemi

SemiconTech

Motorola

ThmsnCSFEFC

AmperexElec

PhilipsElec

See Index

CrimsonSemi

Space Power

SemiconTech

~eelndex

4:,

2.0k

4.0k

10k

50m

300m

3Sp

4.5p

S.Op

8.0p

100n

.01u

50n

20n

50n

400m

300m

500m

400m

3.2m

3.0m

150 J

125 J

175S

310m

200m

500m

200m

500m

SOOm

500m

SOOm

500m

310m

200m

300m

500m

SOOm

S20m

800m

500m

2.9m

.S2m

2.4m

1.2m

2.8m

4.7m

2.8m

5.Sm

2.8m

2.9m

1.2m

3.0m

2.0m

2.8m

4.7m

2.8m

S.Om

:'.tlm

2.0m

2.8m

40m

1.0m

1.2m

3.0m

2.0m

2.6m

2.8m

3.5m

tI.um

2.0m

909u

1.2m

3.3m

2.0m

2.8m

3.1m

2.0m

2.8m

1.7m

2.8m

1.4m

1.7m

135 J

SIP

TO·92var

TO·18

TO·92

TO·23Svar

SPAKvar

TO·92

nmsn~::;~~~~

ggg~

180m

800m

500m

25m

100m

1.0

100m

500m

25m

100m

25m

50m

100m

1.0

200m

1.0

25m

500m

1.0

50m

700m

1.0

25m

100m

25m

50m

100m

500m

1.0

25m

50m

25m

50m

100m

500m

1.()

~gg~

100M

85M

8.0M

SOM

7.0p

8.0p

20p

8.0p

100p

7.0p

8.0p

15p

S.Op

4.0p

8.0p

20p

4.0p

7.0p

1uup

12p

20p

7.0p

8.0p

15D

8.0p

15p

S.Op

5.0p

8.0p

7.0p

20p

15p

S.OD

~~i~~9

2N2038

2N332A

2N757

2N758

MPSS544

2N475

2N475A

2N839

2N780

2N2248

2N1988

MPSS564

ESMS35

2N333A

~~~~~

~~~~~O

BFY11

2SC1072

2N2433

2N334A

2N759

BC302·4

2N32S8

2N840

2N843

2S102

2N2249

2N3S42

TP3642

~~:~gA

See Index

NthAmerSemi

See Index

CrimsonSemi

SemiconTech

Space Power

See Index

Mistral SpA

See Index

NthAmerSemi

NEC Corp JA

See Index

Micro Elecs

Mistral SpA

See Index

::;eelndex

See Index

SemiconTech

CrimsonSemi

Space Power

See Index

SprgueElec

~eelndex

;g~

2.0M

10M

50M

8.0M

30M

80M

SOM

40M

100M

130M

11M

2.0M

40M

SOM

80M

12M

50M

2.5M

30M

40M

120M

SOM

150M

250M

~g~

100n

15n

500n

10u

5.0u

200n

15u

500n

200n

500n

1.0u

2.0u

10n

10u

5.0u

500n

100n

500n

15u

20n

2.0u

300n

1.0n

500n

200n

20n

500n

1.0u

.25u

10u

50n

luun

500n

2.0u

20n

500n

.10u

.01u

200n

5.0n

10n

10u

~g~

~~g~

~~g

150 J

175 S

175S

175 S

175 A

175 S

175 J

175 A

135 J

175S

175 J

tg:~~g

TO·236

TO·92

TO·5

TO·18

TO·5

TO·18

TO·226M

TO·5

TO·18

100

4:'

+g:~8

H~j

1755

150 J

175 J

175 A

175 J

175 S

+g:~ts

TO·18

TO·5

TO·92

N/A

TO·5

TO·9var

TO·46

TO·5

TO·18

TO·39

TO·5

TO·18

TO·105

TO·226

ggg~

300m

800m

500m

850m

150m

200m

300m

400m

500m

350m

tsuum

500m

300m

200m

500m

2S0m

300m

~~~~

+g:~9

~~~

~g~

~gg~

g~~

175 J

1755

175 A

1755

125 J

4:'

t8:~

BSY10

ST45

2N1S74

2N1704

BFY85

2N2432A

ZTX303

2N2897

2N2900

2NS441

2N6443

2N6445

2N6447

2N2387

2N929

Ijl-x92

2N929A

2N2913

2N2915

2N2917

2N2972

2N2974

2N297S

2NS085

2N6085

2NS087

2N6087

2NS089

2N6089

~~g~~A

See Index

Hybrid Semi

NthAmerSemi

SemiconTech

See Index

NthAmerSemi

See Index

Ferrantiltd

::;eelnaex

See Index

Space Power

Hi·Tron

CrimsonSemi

See Index

::;eelndex

See Index

CrimsonSemi

SemiconTech

~pace

",ower

Space Power

CrimsonSeml

SemiconTech

SemlconTech

Space Power

CrimsonSemi

l~~~

SOM

11M

20M

5.0M

20M

150M

1S0M

160M

30M

SOM

80M

tlUM

80M

SOM

80M

SOM

~~g

175 J

175

1755

175

1755

+g:~2

TO·5

N/A

TO·5

TO·77

TO·18

TO·92

t8:l:

TO·78

Macro·T

TO·18

1.0

10m

30m

~gg~

~;~

8.0p

5.0p

S.Op

6.0p

S.Op

~g~

~gg~

550m

300m

500m

300m

250m

300m

g~~

1755

175 J

175J

175 J

1755

~g~

:~~

i.g~

10n

N~~

+g:~g

TO·77

TO·71

TO·78

g~~

1755

t8:~g

716

2N2972 Related Products

	2N2972	2N2913	2N2915	2N2897	2N335A	2N333A
Description	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-71, TO-71, 8 PIN	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-71	TO-77	TO-77	BCY	TO-5	TO-5
package instruction	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	8	8	8	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A	1 A	0.025 A	0.025 A
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V	45 V	45 V
Minimum DC current gain (hFE)	60	60	60	50	45	27
JEDEC-95 code	TO-71	TO-77	TO-77	TO-18	TO-5	TO-5
JESD-30 code	O-MBCY-W8	O-MBCY-W8	O-MBCY-W8	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of terminals	8	8	8	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.3 W	0.3 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz	100 MHz	13 MHz	11 MHz
Base Number Matches	1	1	1	1	1	1
Configuration	Single	-	-	SINGLE	SINGLE	SINGLE

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