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2SA1430-B

Description
TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size132KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1430-B Overview

TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal

2SA1430-B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SA1430
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications
Medium Power Amplifier Applications
Unit: mm
High DC current gain and excellent h
FE
linearity
: h
FE (1)
= 140 to 600 (V
CE
=
−1
V, I
C
=
−0.5
A)
: h
FE (2)
= 60 (min), 120 (typ.) (V
CE
=
−1
V, I
C
=
−4
A)
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
(I
C
=
−2
A, I
B
=
−50
mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−20
−20
−10
−6
−2
−4
−2
1000
150
−55
to 150
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
2-7D101A
A
mW
°C
°C
Weight: 0.2 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09

2SA1430-B Related Products

2SA1430-B 2SA1430-A 2SA1430-C
Description TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 140 300
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz 140 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1

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