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2N7290D1

Description
5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2N7290D1 Overview

5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

2N7290D1 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknow
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance1.42 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)15 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
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