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MMBD4448HAQW

Description
Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    diode   
File Size670KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

MMBD4448HAQW Overview

Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

MMBD4448HAQW Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionULTRA SMALL, PLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components4
Number of terminals6
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
MCC
Micro Commercial Components
MMBD4448HAQW/
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
ADW/CDW/SDW/
CQW/TW
200mW
Switching Diodes
SOT-363
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance, Power Dissipation
Ultra-Small Surface Mount Package
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
R
θ
JA
P
D
T
J
T
STG
Symbol
V
(BR)
I
R
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @1.0μs
@1.0s
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
Rating
100
80
57
500
250
4.0
2.0
625
200
150
-65 to +150
Unit
V
V
V
mA
mA
A
℃/W
mW
K
G
B
C
A
H
M
J
F
D
L
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage
Current
Min
80V
---
0.62
---
---
---
---
---
Max
---
100nA
50μA
30
μA
25nA
0.72V
0.855V
1.0V
1.25V
3.5pF
4.0ns
Test Conditions
I
R
=100
μA
V
R
=70V
V
R
=75V, T
J
=150℃
V
R
=25V, T
J
=150℃
V
R
=20V
I
F
=5.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=6V, f=1MHZ
I
F
=5mA,
V
R
=6V
DIMENSIONS
INCHES
DIM
A
B
C
D
F
H
J
K
L
M
MIN
.004
.045
.079
.026
.012
.071
---
.035
.010
.004
.016
.087
.004
.039
.016
.016
MAX
.012
.053
.087
MM
MIN
MAX
0.10
0.30
1.15
1.35
2.00
2.20
0.65Nominal
0.30
0.40
1.80
2.20
---
0.10
0.90
1.00
0.25
0.40
0.10
0.25
NOTE
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
A
1
C
A
2
C
1
A
C
2
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
C
1
C
2
C
3
A
4
NC
A
3
C
4
NC
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
A
3
Marking: KA4
MMBD4448HCQW
Marking: KA5
MMBD4448HAQW
Marking: KA6
MMBD4448HADW
Marking: KA7
MMBD4448HCDW
Marking: KAB
MMBD4448HSDW
Marking: KAA
MMBD4448HTW
Revision: 2
www.mccsemi.com
1 of 4
2006/05/13
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