BD135-6 datasheet, PDF - EEWORLD Datasheet

BD135-6: DescriptionTRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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BD135-6 Overview

TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Reach Compliance Code	compliant
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	40
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	13 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	250 MHz

	BD135-6	BCY71A	BCY72	BD135-10	BCY59-10	BCY71	BD135-16
Description	TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA	TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-18	TRANSISTOR,BJT,PNP,25V V(BR)CEO,200MA I(C),TO-206AA	TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA	TRANSISTOR,BJT,NPN,45V V(BR)CEO,TO-18	TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-206AA	TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli	compli
Configuration	Single	Single	Single	Single	Single	Single	Single
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	175 °C	175 °C	150 °C	175 °C	175 °C	150 °C
Polarity/channel type	NPN	PNP	PNP	NPN	NPN	PNP	NPN
Maximum power dissipation(Abs)	13 W	0.35 W	0.36 W	13 W	0.36 W	0.36 W	13 W
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	250 MHz	380 MHz	250 MHz	50 MHz	125 MHz	250 MHz	250 MHz
Maker	National Semiconductor（TI ）	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Maximum collector current (IC)	1.5 A	0.2 A	0.2 A	1.5 A	-	0.2 A	1.5 A
Minimum DC current gain (hFE)	40	-	50	63	630	-	100

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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