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BD135-16

Description
TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BD135-16 Overview

TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA

BD135-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
Reach Compliance Codecompli
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)13 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)250 MHz

BD135-16 Related Products

BD135-16 BCY71A BCY72 BD135-10 BD135-6 BCY59-10 BCY71
Description TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-18 TRANSISTOR,BJT,PNP,25V V(BR)CEO,200MA I(C),TO-206AA TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA TRANSISTOR,BJT,NPN,45V V(BR)CEO,1.5A I(C),TO-225AA TRANSISTOR,BJT,NPN,45V V(BR)CEO,TO-18 TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-206AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code compli compliant compliant compliant compliant compliant compli
Configuration Single Single Single Single Single Single Single
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 175 °C 175 °C 150 °C 150 °C 175 °C 175 °C
Polarity/channel type NPN PNP PNP NPN NPN NPN PNP
Maximum power dissipation(Abs) 13 W 0.35 W 0.36 W 13 W 13 W 0.36 W 0.36 W
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 250 MHz 380 MHz 250 MHz 50 MHz 250 MHz 125 MHz 250 MHz
Maker National Semiconductor(TI ) - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
Maximum collector current (IC) 1.5 A 0.2 A 0.2 A 1.5 A 1.5 A - 0.2 A
Minimum DC current gain (hFE) 100 - 50 63 40 630 -
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