BS870/E6 datasheet, PDF - EEWORLD Datasheet

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BS870/E6: DescriptionSmall Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size260KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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BS870/E6 Overview

Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN

BS870/E6 Parametric

Parameter Name	Attribute value
Maker	Vishay
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH INPUT IMPEDENCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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BS870

DMOS Transistors (N-Channel)

TO-263AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

.056 (1.43

)

.052 (1.33

)

Top View

Pin Configuration

Gate

Source

Drain

Mounting Pad Layout

0.037 (0.95)

max. .004 (0.1)

0.079 (2.0)

.007 (0.175)

.005 (0.125)

.037(0.95) .037(0.95)

0.035 (0.9)

.045 (1.15)

.037 (0.95)

0.031 (0.8)

.016 (0.4)

.102 (2.6)

.094 (2.4)

Dimensions

in inches and (millimeters)

Dimensions inches and (millimeters)

Features

• High input impedance

• High-speed switching

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

• No secondary breakdown

Mechanical Data

Case:

SOT-23 Plastic Package

Weight:

approx. 0.008g

Packaging Codes/Options:

E6/Bulk- 5K per container, 20K/box

E7/4K per Ammo tape, 20K/box

Maximum Ratings and Thermal Characteristics

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at T

= 50°C

Thermal Resistance Junction to Substrate

Backside

Thermal Resistance Junction to Ambiant Air

Junction Temperature

Storage Temperature Range

Note:

(1) Ceramic Substrate 0.7 mm; 2.5 cm

area.

= 25°C unless otherwise noted)

Symbol

DSS

DGS

tot

thSB

thJA

Limit

Unit

°C/W

°C

5/5/00

250

0.310

320

450

150

-65 to +150

BS870/E6 Related Products

	BS870/E6	BS870/E7
Description	Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN	Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN
Maker	Vishay	Vishay
Parts packaging code	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HIGH INPUT IMPEDENCE	HIGH INPUT IMPEDENCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	0.25 A	0.25 A
Maximum drain-source on-resistance	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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