BS870
DMOS Transistors (N-Channel)
TO-263AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Pin Configuration
1.
Gate
2.
Source
3.
Drain
Mounting Pad Layout
0.037 (0.95)
0.037 (0.95)
1
2
max. .004 (0.1)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
0.035 (0.9)
.045 (1.15)
.037 (0.95)
0.031 (0.8)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions
in
in inches and (millimeters)
Dimensions inches and (millimeters)
Features
• High input impedance
• High-speed switching
• No minority carrier storage time
• CMOS logic compatible input
• No thermal runaway
• No secondary breakdown
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T
SB
= 50°C
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Note:
(1) Ceramic Substrate 0.7 mm; 2.5 cm
2
area.
A
= 25°C unless otherwise noted)
Symbol
V
DSS
V
DGS
V
GS
I
D
P
tot
R
thSB
R
thJA
T
j
T
S
Limit
60
60
±
20
Unit
V
V
V
mA
W
°C/W
°C/W
°C
°C
5/5/00
250
0.310
1)
320
1)
450
1)
150
-65 to +150
BS870
DMOS Transistors (N-Channel)
Electrical Characteristics
(T
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Cutoff Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Turn-On Time
Turn-Off Time
Note:
(1)Device on fiberglass substrate, see layout
J
= 25°C unless otherwise noted)
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
m
C
iss
t
on
t
off
Test Condition
I
D
= 100µA, V
GS
= 0
V
GS
= V
DS
, I
D
= 1m A
V
GS
= 15V, V
DS
= 0V
V
DS
= 25V, V
GS
= 0V
V
GS
= 10V, I
D
= 200mA
V
DS
= 10V, I
D
= 200mA,
f = 1MHz
V
DS
= 10V, V
GS
= 0
f = 1MHz
V
GS
= 10V, V
DS
= 10V
R
D
= 100Ω
Min
60
1.0
—
—
—
—
—
—
—
Typ
80
2.0
—
—
3.5
200
30
5
25
Max
—
3.0
10
0.5
5.0
—
—
—
—
Unit
V
nA
µA
Ω
mS
pF
ns
ns
Inverse Diode
Parameter
Max. Forward Current (continuous)
Forward Voltage Drop (typ.)
Symbol
I
F
V
F
Test Condition
T
amb
= 25 °C
V
GS
= 0V, I
F
= 0.3A
T
j
= 25°C
Value
0.3
0.85
Unit
A
V
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.30 (7.5)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
Dimensions in inches and (millimeters)
BS870
DMOS Transistors (N-Channel)
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BS870
BS870
˚
˚
BS870
BS870
˚
˚
BS870
DMOS Transistors (N-Channel)
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BS870
BS870
˚
˚
˚
BS870
BS870
˚
˚
˚
BS870
DMOS Transistors (N-Channel)
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BS870
BS870
˚
BS870
BS870
˚
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