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BSS192

Description
Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA
CategoryDiscrete semiconductor    The transistor   
File Size256KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BSS192 Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

BSS192 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
Other featuresCMOS COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSS192
SO
T8
9
240 V, P-channel vertical D-MOS transistor
12 December 2014
Product data sheet
1. General description
P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-
MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device
(SMD) plastic package.
2. Features and benefits
Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic
(TTL) devices
Very fast switching
No secondary breakdown
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -200 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
-240
20
-200
Unit
V
V
mA
Static characteristics
drain-source on-state
resistance
[1]
2
-
10
12
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
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