EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1479-C

Description
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1479-C Overview

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN

2SA1479-C Parametric

Parameter NameAttribute value
Objectid1481156748
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)7 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Ordering number:ENN2093
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1479/2SC3789
High-Definiton CRT Display
Video Output Applications
Applications
· High-definition CRT display.
· Color TV chroma output, high breakdown voltage
drivers.
Package Dimensions
unit:mm
2042B
[2SA1479/2SC3789]
8.0
1.0
4.0
1.0
Features
· High breakdown voltage (V
CEO
≥300V).
· Excellent high frequency characteristic
: C
re
=1.8pF (typ).
· Adoption of MBIT process.
· No insulator required for mounting, which contrib-
utes to reducing the cost and the number of manufac-
turing processes.
· Plastic-covered heat sink facilitating high-density
mounting.
· Directly interchange able with TO-126 because the
package is designed based on the conventional
package dimensions.
( ) : 2SA1479
1.4
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.5
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5

2SA1479-C Related Products

2SA1479-C 2SC3789-C 2SC3789-D 2SC3789-E 2SC3789-F 2SA1479-D 2SA1479-E 2SA1479-F
Description Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN 0.1A, 300V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 0.1A, 300V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 0.1A, 300V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN 0.1A, 300V, PNP, Si, POWER TRANSISTOR, TO-126ML, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
Parts packaging code SIP SIP SIP SIP SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknow unknown unknown unknown unknown unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 300 V 300 V 300 V 300 V 300 V 300 V 300 V 300 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 60 100 160 60 100 160
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN NPN NPN NPN PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz 70 MHz 70 MHz 70 MHz 70 MHz 70 MHz 70 MHz
Objectid 1481156748 1481157051 - 1991532214 1991532215 1481156751 1991532194 1481156757
Why is the serial port sending data incorrect?
When only one data is sent, the data is correct, but when the data is sent continuously in the query mode, the data is wrong. Moreover, when judging whether the data end code is received, the query mo...
wuaiabab MCU
Getting a task done in another clock domain
If the clkA domain has a task that needs to be completed in the clkB domain, you can use the following design. [img]http://www.fpga4fun.com/images/CrossClockDomain.task.gif[/img] Here's one way to do ...
eeleader FPGA/CPLD
The latest embedded design textbook published in 2008, share the first two
Just got a new book, published in 2008...
besk Embedded System
Understanding and judging transistor saturation and deep saturation states
[size=4]Summary of transistor saturation problems: [/size] [size=4] [/size] [size=4]1. In actual work, Ib*β=V/R is often used as a condition for judging critical saturation. The Ib value calculated ba...
Aguilera Analogue and Mixed Signal
Survey: What microcontrollers do people use?
I have NEC, PIC. It seems that few people use NEC. Let's see if there will be others besides me....
clwzqq Embedded System
EEWORLD University ---- PSoC Creator Feature Overview: File Manager
PSoC Creator Feature Overview: File Manager : https://training.eeworld.com.cn/course/2005This tutorial demonstrates how to use the PSoC Creator Document Manager....
chenyy Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2472  1968  959  337  671  50  40  20  7  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号