Ordering number:ENN2093
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1479/2SC3789
High-Definiton CRT Display
Video Output Applications
Applications
· High-definition CRT display.
· Color TV chroma output, high breakdown voltage
drivers.
Package Dimensions
unit:mm
2042B
[2SA1479/2SC3789]
8.0
1.0
4.0
1.0
Features
· High breakdown voltage (V
CEO
≥300V).
· Excellent high frequency characteristic
: C
re
=1.8pF (typ).
· Adoption of MBIT process.
· No insulator required for mounting, which contrib-
utes to reducing the cost and the number of manufac-
turing processes.
· Plastic-covered heat sink facilitating high-density
mounting.
· Directly interchange able with TO-126 because the
package is designed based on the conventional
package dimensions.
( ) : 2SA1479
1.4
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.5
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5
2SA1479/2SC3789
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
(–)300
(–)300
(–)5
2.6
(3.1)
1.8
(2.3)
40*
70
(–)0.6
(–)1.0
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
V
V
V
V
V
pF
pF
pF
pF
Unit
µA
µA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
Cob
Cre
IE=(–)10µA, IC=0
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
* : The 2SA1479/2SC3789 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
--
8
--
7
Collector Current, IC – mA
IC -- VCE
2SA1479
Collector Current, IC – mA
8
7
IC -- VCE
2SC3789
--
6
--
5
--
4
--
3
--
2
--
1
0
0
--40µA
--30µA
6
5
40µA
30µA
4
3
2
--20µA
20µA
--10µA
10µA
1
IB=0
--
2
--
4
--
6
--
8
Collector-to-Emitter Voltage, VCE – V
--
10
ITR03763
0
IB=0
0
2
4
6
8
10
ITR03764
Collector-to-Emitter Voltage, VCE – V
8
7
--
8
--
7
Collector Current, IC – mA
IC -- VCE
2SA1479
IC -- VCE
2SC3789
--40
µ
A
Collector Current, IC – mA
40
µ
A
--
6
--
5
--
4
--
3
--
2
--
1
0
6
5
4
--30
µ
A
30
µ
A
--20
µ
A
20
µA
3
2
1
--10µA
10µA
IB=0
0
40
80
120
160
200
ITR03766
IB=0
0
--
40
--
80
--
120
--
160
Collector-to-Emitter Voltage, VCE – V
--
200
ITR03765
0
Collector-to-Emitter Voltage, VCE – V
I
V
I
V
No.2093-2/5
2SA1479/2SC3789
--
120
--
100
IC -- VBE
2SA1479
VCE=--5V
120
IC -- VBE
2SC3789
VCE=5V
100
Collector Current, IC – mA
Collector Current, IC – mA
--25
°C
--
60
--
40
--
20
0
60
40
20
0
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE – V
--
1.0
ITR03767
0
0
0.2
0.4
0.6
--25
°
C
0.8
25
°C
25
°
C
--
80
Ta=75
°
C
80
Ta=75
°
C
1.0
ITR03768
Base-to-Emitter Voltage, VBE – V
1000
1000
7
5
hFE -- IC
2SA1479
VCE=--10V
hFE -- IC
2SC3789
VCE=10V
Ta=75
°C
7
5
DC Current Gain, hFE
2
Ta=75
°C
25
°C
DC Current Gain, hFE
3
3
2
25
°C
--25
°C
100
7
5
3
2
--25
°C
100
7
5
3
2
10
--
1.0
2
2
3
2
5
3
--
10
Collector Current, IC – mA
5
7
7
--
100
2
10
1.0
2
3
5
ITR03769
2
Collector Current, IC – mA
7 10
2
3
5
7
2
100
ITR03770
fT -- IC
Gain-Bandwidth Product, fT – MHz
fT -- IC
2SC3789
VCE=30V
Gain-Bandwidth Product, fT – MHz
2SA1479
VCE=--30V
7
5
100
100
7
5
3
2
3
2
10
7
5
5
7
10
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
5
5
7 1.0
2
3
5
7
ITR03771
2
Collector Current, IC – mA
10
2
3
5
7
2
100
ITR03772
2
Cob -- VCB
2SA1479
f=1MHz
Cob -- VCB
2SC3789
f=1MHz
Output Capacitance, Cob – pF
10
7
5
Output Capacitance, Cob – pF
2
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03773
3
5
7
10
7
5
3
2
3
2
1.0
7
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7
2
100
ITR03774
--
1.0
5
Collector-to-Base Voltage, VCB -- V
No.2093-3/5
2SA1479/2SC3789
2
Cre -- VCB
Reverse Transfer Capacitance, Cre – pF
2SA1479
f=1MHz
2
Cre -- VCB
2SC3789
f=1MHz
Reverse Transfer Capacitance, Cre – pF
10
7
5
10
7
5
3
2
3
2
1.0
7
5
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7
2
100
ITR03776
--
1.0
2
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03775
3
5
7
Collector-to-Base Voltage, VCB -- V
--
10
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2SA1479
IC / IB=10
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
VCE(sat) -- IC
2SC3789
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
3
2
--
1.0
7
5
3
2
--
0.1
7
5
3
5
7
--
1.0
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
--
100
2
3
5 7
1.0
2
3
5
7
ITR03777
10
7
Collector Current, IC – mA
10
2
3
5
7 100
2
ITR03778
--
10
7
VBE(sat) -- IC
2SA1479
IC / IB=10
VBE(sat) -- IC
2SC3789
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
7
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
2
5
3
2
3
2
--
1.0
7
5
3
25
1.0
7
5
3
2
5
7 1.0
2
3
5
7
2
3
5
7 100
2
ITR03780
--
1.0
--
100
ITR03779
3
2
Collector Current, IC – mA
10
8
7
PC -- Ta
2SA1479 / 2SC3789
Collector Current, IC – mA
ASO
ICP=200mA
IC=100mA
DC
2SA1479 / 2SC3789
s
0
µ
50
s
1m
Collector Dissipation, P
C
– W
6
5
4
3
2
1
0
100
7
5
3
2
10
m
DC
op
era
s
tio
n
10
7
5
3
(T
a=
25
°
er
(T
ation
c=
25
°
C
)
C)
op
No hea
t sink
100
120
140
160
(For PNP, minus sign is omitted.)
5
7
10
2
3
5
7
100
2
3
5
0
20
40
60
80
2
Ambient Temperature, Ta – ˚C
ITR03781
Collector-to-Emitter Voltage, VCE – V
ITR03782
No.2093-4/5
2SA1479/2SC3789
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2093-5/5
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