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BCX53-16T/R

Description
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, TO-243, SC-62, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size128KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCX53-16T/R Overview

TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, TO-243, SC-62, 3 PIN, BIP General Purpose Power

BCX53-16T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)145 MHz
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BC640
[2]
BCP53
BCX53
[1]
[2]
Type number
[1]
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC639
BCP56
BCX56
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−80
−1
−1.5
250
160
250
Unit
V
A
A

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Description TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, TO-243, SC-62, 3 PIN, BIP General Purpose Power TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power Guard ring for enhanced ruggedness and long term reliability TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power 1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN
Is it Rohs certified? conform to conform to conform to - conform to conform to conform to
Maker NXP NXP - - NXP NXP NXP
Parts packaging code SOT-89 TO-92 - - SOT-89 SC-73 SC-73
package instruction SMALL OUTLINE, R-PSSO-F3 CYLINDRICAL, O-PBCY-T3 - - PLASTIC, MPT3, SMD, SC-62, UPAK-3 PLASTIC, SC-73, 4 PIN SMALL OUTLINE, R-PDSO-G4
Contacts 3 3 - - 3 4 4
Reach Compliance Code unknown compliant unknown - unknown unknown unknown
Shell connection COLLECTOR - COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A - 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V - 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 63 25 - 40 100 63
JESD-30 code R-PSSO-F3 O-PBCY-T3 R-PDSO-G4 - R-PSSO-F3 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 - 1 1 1
Number of terminals 3 3 4 - 3 4 4
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CYLINDRICAL SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP - PNP PNP PNP
Maximum power dissipation(Abs) 1 W 0.8 W - - 2 W - 1.5 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES NO YES - YES YES YES
Terminal form FLAT THROUGH-HOLE GULL WING - FLAT GULL WING GULL WING
Terminal location SINGLE BOTTOM DUAL - SINGLE DUAL DUAL
transistor applications SWITCHING SWITCHING AMPLIFIER - AMPLIFIER SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 145 MHz 145 MHz 115 MHz - 50 MHz 145 MHz 145 MHz
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