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BCP53T/R

Description
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size128KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCP53T/R Overview

TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

BCP53T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)115 MHz
Base Number Matches1
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BC640
[2]
BCP53
BCX53
[1]
[2]
Type number
[1]
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC639
BCP56
BCX56
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−80
−1
−1.5
250
160
250
Unit
V
A
A

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Description TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal Guard ring for enhanced ruggedness and long term reliability TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, TO-243, SC-62, 3 PIN, BIP General Purpose Power TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power 1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN
Is it Rohs certified? conform to conform to - conform to conform to conform to conform to
Reach Compliance Code unknown compliant - unknown unknown unknown unknown
Shell connection COLLECTOR - - COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A - 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V - 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 63 - 100 40 100 63
JESD-30 code R-PDSO-G4 O-PBCY-T3 - R-PSSO-F3 R-PSSO-F3 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 - 1 1 1 1
Number of terminals 4 3 - 3 3 4 4
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CYLINDRICAL - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP - PNP PNP PNP PNP
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO - YES YES YES YES
Terminal form GULL WING THROUGH-HOLE - FLAT FLAT GULL WING GULL WING
Terminal location DUAL BOTTOM - SINGLE SINGLE DUAL DUAL
transistor applications AMPLIFIER SWITCHING - SWITCHING AMPLIFIER SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 115 MHz 145 MHz - 145 MHz 50 MHz 145 MHz 145 MHz
Maker - NXP - NXP NXP NXP NXP
Parts packaging code - TO-92 - SOT-89 SOT-89 SC-73 SC-73
package instruction - CYLINDRICAL, O-PBCY-T3 - SMALL OUTLINE, R-PSSO-F3 PLASTIC, MPT3, SMD, SC-62, UPAK-3 PLASTIC, SC-73, 4 PIN SMALL OUTLINE, R-PDSO-G4
Contacts - 3 - 3 3 4 4
Maximum power dissipation(Abs) - 0.8 W - 1 W 2 W - 1.5 W
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