Preliminary
Datasheet
BCR10CS-12LB
600V-10A-Triac
Medium Power Use
Features
I
T (RMS)
: 10 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
R07DS0224EJ0500
Rev.5.00
Oct 19, 2015
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
RENESAS Package code: PR
PRSS0004AB-A
20S)
0S)
(Package name: TO-220S)
1
2
3
L
EO
1
2
4
4
KG
P
2, 4
3
1
3
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
RENESAS Package code: PRSS0004AS-A
(Package name: TO-263)
4
RENESAS Package code: PRSS0004AR-A
(Package name: TO-262)
1 2 3
1 23
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS0224EJ0500 Rev.5.00
Oct 19, 2015
Page 1 of 9
BCR10CS-12LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction, Tc = 128C
Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
1.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 15 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note5
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T
2
tab.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0224EJ0500 Rev.5.00
Oct 19, 2015
Page 2 of 9
BCR10CS-12LB
Preliminary
Performance Curves
Maximum
On-State
Characteristics
10
2
100
7
5
Rated
Surge
On-State
Current
Surge
On-State
Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State
Current (A)
3
2
Tj = 150°C
10
1
7
5
3
2
Tj = 25°C
10
0
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State
Voltage (V)
Conduction
Time
(Cycles at
60Hz)
Gate Trigger
Current (Tj
=
t°C)
×
100
(%)
Gate Trigger
Current (Tj
= 25°C)
Gate
Characteristics (I,
II
and
III)
5
3
2
Gate Trigger
Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
V
GM
= 10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
= 2A
Gate
Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
I
RGT I
, I
RGT III
V
GT
= 1.5V
10
2
7
5
3
2
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
10
–1
7
V
GD
= 0.1V
5
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate
Current (mA)
Junction Temperature
(°C)
Gate Trigger
Voltage (Tj
=
t°C)
×
100
(%)
Gate Trigger
Voltage (Tj
= 25°C)
Gate Trigger
Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum
Transient Thermal Impedance
Characteristics (Junction to case)
10
2
2 3 5 7 10
3
2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Transient Thermal Impedance
(°C/W)
Junction Temperature
(°C)
Conduction
Time
(Cycles at
60Hz)
R07DS0224EJ0500 Rev.5.00
Oct 19, 2015
Page 3 of 9
BCR10CS-12LB
Preliminary
Allowable
Case Temperature vs.
RMS On-State
Current
160
140
Maximum
On-State Power
Dissipation
32
On-State Power
Dissipation (W)
28
24
360°
Conduction
Resistive,
20
inductive loads
16
12
8
4
0
0
2
4
6
8
10
12
14
16
Case Temperature (°C)
120
Curves apply
regardless of
100
conduction angle
80
60
40
360°
Conduction
20
Resistive,
inductive loads
0
4
8
0
2
6
10
12
14
16
RMS On-State
Current (A)
RMS On-State
Current (A)
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
160
Allowable Ambient
Temperature vs.
RMS On-State
Current
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive,
inductive loads
Ambient
Temperature (°C)
120
100
80
100
×
100
×
t2.3
60
×
60
×
t2.3
Ambient
Temperature (°C)
140
120
×
120
×
t2.3
140
120
100
80
60
40
20
0
0
All
fins are black
60
painted aluminum
and greased
40
Curves apply regardless
of conduction angle
20
Resistive,
inductive loads
Natural convection
0
0
2
4
6
8 10
12
14
16
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
RMS On-State
Current (A)
RMS On-State
Current (A)
Repetitive Peak Off-State
Current (Tj = t°C)
×
100
(%)
Repetitive Peak Off-State
Current (Tj =
25°C)
Repetitive Peak Off-State
Current vs.
Junction
Temperature
10
6
Holding Current vs.
Junction
Temperature
Holding Current (Tj = t°C)
×
100
(%)
Holding Current (Tj =
25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40
60 80 100 120 140 160
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Typical Example
Typical Example
10
5
10
4
10
3
10
2
–60 –40 –20
0 20
40
60 80 100 120 140 160
Junction
Temperature (°C)
Junction
Temperature (°C)
R07DS0224EJ0500 Rev.5.00
Oct 19, 2015
Page 4 of 9
BCR10CS-12LB
Latching Current vs.
Junction
Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Preliminary
Breakover Voltage vs.
Junction
Temperature
Breakover Voltage (Tj = t°C)
×
100
(%)
Breakover Voltage (Tj =
25°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20
40
60 80 100 120 140 160
Latching Current (mA)
Distribution
T
2
+
, G
–
Typical Example
10
0
–40
T
2
+
, G
+
Typical Example
T
2
–
, G
–
0
40
80
120
160
Junction
Temperature (°C)
Junction
Temperature (°C)
Breakover Voltage (dv/dt =
xV/μs)
×
100
(%)
Breakover Voltage (dv/dt =
1V/μs)
160
140
120
100
80
60
40
20
Breakover Voltage (dv/dt =
xV/μs)
×
100
(%)
Breakover Voltage (dv/dt =
1V/μs)
Breakover Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=125°C)
Typical Example
Tj =
125°C
Breakover Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Typical Example
Tj =
150°C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
1
7
5
3
2
10
0
7
0
10
2 3
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Commutation Characteristics (Tj=150°C)
7
5
3
2
10
1
7
5
3
2
Minimum
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj =
125°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f =
3Hz
Typical Example
Tj =
150°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f =
3Hz
Minimum
Characteristics
Value
I Quadrant
I Quadrant
III Quadrant
10
0
Characteristics
Value
5 7 10
1
2 3
5 7 10
2
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate
of Decay of
On-State
Commutating Current (A/ms)
Rate
of Decay of
On-State
Commutating Current (A/ms)
R07DS0224EJ0500 Rev.5.00
Oct 19, 2015
Page 5 of 9
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