Preliminary
Datasheet
BCR1AM-8P
400V-1A-Triac
Low Power Use
Features
I
T (RMS)
: 1 A
V
DRM
:400 V
I
FGTI
: 5 mA
I
RGTI
, I
RGTIII
: 5 mA or 3mA(I
GT
item:1)
I
FGTIII
: 10 mA
Non-Insulated Type
Planar Passivation Type
RoHS Compliant
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A)
R07DS0178EJ0200
Rev.2.00
Aug 25,2015
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
RENESAS Package code: PRSS0003DJ-A
(Package name: TO-92)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
3
1
2
1
3
2
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
1.0
10
0.41
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Typical value
Voltage class
8
400
500
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 56C
Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
R07DS0178EJ0200 Rev.2.00
Aug 25,2015
Page 1 of 7
BCR1AM-8P
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
V
V
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
V
FGT
I
FGT
I
RGT
I
RGT
I
FGT
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
—
—
—
—
—
—
—
—
—
—
0.1
—
2
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
0.5
1.6
2.0
2.0
2.0
2.0
5
5
Note5
5
Note5
10
—
50
—
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 1.5 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Gate trigger current
Note2
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note4
Notes: 2.
3.
4.
5.
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
terminal 1.5 mm away from the molded case.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
3 mA) is also available. (I
GT
item: 1)
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0178EJ0200 Rev.2.00
Aug 25,2015
Page 2 of 7
BCR1AM-8P
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
Tj = 25°C
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
10
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
8
6
4
2
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
10
1
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
V
GM
= 6V
P
G(AV)
= 0.1W
P
GM
=
1W
Typical Example
Gate Voltage (V)
10
0
7
5
3
I
FGT I
2
I
RGT I
I
RGT III
10
–1
7
5
3
2
I
GM
= 0.5A
I
FGT I
, I
RGT I
I
FGT III
V
GD
= 0.1V
I
RGT III
, I
FGT III
10
–2
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
FGT I
, V
RGT I
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
10
3
7
5
3
2
Junction to ambient
2
10
7
5
Junction to case
3
2
10
1
7
5
3
2
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
V
RGT III
,V
FGT III
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0178EJ0200 Rev.2.00
Aug 25,2015
Page 3 of 7
BCR1AM-8P
Preliminary
Allowable Case
Temperature
vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.6
Case
Temperature
(°C)
140
120
100
80
60
40
Curves apply regardless
of conduction angle
1.2
0.8
0.4
360° Conduction
Resistive,
inductive loads
0
0.4
0.8
1.2
1.6
2.0
0
360° Conduction
20
Resistive,
inductive loads
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj
=
t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj
=
25°C)
Allowable Ambient
Temperature
vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction
Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20
0 20
40
60 80 100 120 140
Ambient
Temperature
(°C)
140
120
100
80
60
40
20
0
0
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural
convection
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
Junction
Temperature
(°C)
Holding
Current vs.
Junction
Temperature
Holding
Current (Tj
=
t°C)
×
100 (%)
Holding
Current (Tj
=
25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40
60 80 100 120 140
Latching
Current vs.
Junction
Temperature
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
Typical Example
Distribution
Latching
Current (mA)
T
2
+
, G
–
Typical Example
T
2
+
, G
+
T
2
–
, G
– Typical Example
T
2
–
, G
+
10
-1
–60 –40 –20
0 20
40
60 80 100 120 140
Junction
Temperature
(°C)
Junction
Temperature
(°C)
R07DS0178EJ0200 Rev.2.00
Aug 25,2015
Page 4 of 7
BCR1AM-8P
Breakover Voltage vs.
Junction Temperature
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
160
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Typical Example
Tj = 125°C
I Quadrant
III Quadrant
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
Typical Example
Tj = 125°C
I
T
= 1A
τ
= 500μs
V
D
= 200V
Minimum
Characteristics
Value
III Quadrant
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
Typical Example
I
FGT I
I
FGT III
I
RGT III
I
RGT I
I Quadrant
10
–1 –1
10
2 3 4 5 7 10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure III
Test Procedure IV
R07DS0178EJ0200 Rev.2.00
Aug 25,2015
Page 5 of 7
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