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2SA1201YTE12R

Description
TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size148KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1201YTE12R Overview

TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SA1201YTE12R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.8 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max1 V
Base Number Matches1
2SA1201
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
High voltage: V
CEO
=
−120
V
High transition frequency: f
T
= 120 MHz (typ.)
Small flat package
P
C
= 1 to 2 W (mounted on a ceramic substrate)
Complementary to 2SC2881
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−120
−120
−5
−800
−160
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
°C
°C
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SA1201YTE12R Related Products

2SA1201YTE12R 2SA1201-O 2SA1201OTE12L 2SA1201OTE12R 2SA1201-Y 2SA1201-Y(TE12L,C) 2SA1201-Y(TE12L,CF) 2SA1201YTE12L 2SA1201TE12R 2SA1201TE12L
Description TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal Trans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R Trans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1 1 1
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 - PW-MINI, 2-5K1A, SC-62, 3 PIN SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - - EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR - - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A - - 0.8 A 0.8 A 0.8 A
Collector-based maximum capacity 30 pF 30 pF 30 pF 30 pF 30 pF - - 30 pF 30 pF 30 pF
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V - - 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 80 80 80 120 - - 120 80 80
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 - - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 - - 1 1 1
Number of terminals 3 3 3 3 3 - - 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP - - PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES - - YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT - - FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE - - SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON - - SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz - - 120 MHz 120 MHz 120 MHz
VCEsat-Max 1 V 1 V 1 V 1 V 1 V - - 1 V 1 V 1 V
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