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2SB514C

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB514C Overview

Transistor

2SB514C Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB514
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD330
・Low
collector saturation voltage
APPLICATIONS
・Suited
for use in output stage of 10W
AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
Collector-base voltage
HA
INC
Emitter-base voltage
Collector dissipation
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-50
-50
-5
-2
-5
UNIT
V
V
V
A
A
Open collector
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.75
W
20
150
-50~150
P
C
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

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Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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