Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB514
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD330
・Low
collector saturation voltage
APPLICATIONS
・Suited
for use in output stage of 10W
AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector dissipation
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-50
-50
-5
-2
-5
UNIT
V
V
V
A
A
Open collector
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.75
W
20
150
-50~150
℃
℃
P
C
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-1A ; V
CE
=-5V
V
CB
=-20V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-0.1A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-5V
40
35
8
MIN
-50
TYP.
2SB514
MAX
UNIT
V
-1.0
-1.5
-0.1
-1.0
320
V
V
mA
mA
h
FE-1
Classifications
C
40-80
D
60-120
固电
IN
导½
半
E
100-200
F
160-320
ANG
CH
MIC
E SE
OR
UCT
ND
O
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB514
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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