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DMC56603

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size440KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
Download Datasheet Parametric View All

DMC56603 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

DMC56603 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC56603
Silicon NPN epitaxial planar type
For digital circuits
DMC26603 in SMini6 type package
Features
Package
Code
SMini6-F3-B
Name
Pin
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DRC2144E (Individual)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: H4
Internal Connection
Unit
V
V
mA
mW
°C
°C
Resistance value
(C1)
6
(B1)
5
R
1
Tr1
R
2
R
2
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
–55 to +150
(C2)
4
Tr2
R
1
1
(E1)
2
(E2)
3
(B2)
R
1
R
2
47
47
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(Small/Large)
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
47
1.0
3.6
0.8
+30%
1.2
80
0.50
0.99
0.25
Min
50
50
0.1
0.5
0.1
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: March 2010
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