Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
| Parameter Name | Attribute value |
| Maker | Harris |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 0.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 25 W |
| Maximum pulsed drain current (IDM) | 20 A |
| Certification status | Not Qualified |
| Guideline | MILITARY STANDARD (USA) |
| surface mount | NO |
| Terminal surface | NOT SPECIFIED |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 160 ns |
| Maximum opening time (tons) | 150 ns |
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