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2SA1882S

Description
Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1882S Overview

Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN

2SA1882S Parametric

Parameter NameAttribute value
Objectid1543500766
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1.3 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Ordering number:ENN4633A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1882/2SC4984
Low-Frequency
General-Purpose Amplifier Applications
Applcations
· Low-frequency power amplifier applications.
· Medium-speed switching.
· Small-sized motor drivers.
Package Dimensions
unit:mm
2038A
[2SA1882/2SC4984]
4.5
1.6
1.5
Features
· Large current capacity.
· Low collector-to-emitter saturation voltage.
0.4
3
1.5
0.5
2
3.0
0.75
1
1.0
2.5
4.25max
0.4
Specifications
( ) : 2SA1882
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board (250mm
×0.8mm)
2
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Conditions
Ratings
(–)15
(–)15
(–)5
(–)1.5
(–)3
(–)300
1.3
150
–55 to +150
Unit
V
V
V
A
A
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)12V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)50mA
VCB=(–)10V, f=1MHz
140*
70
(300)
200
(15)10
MHz
MHz
pF
Conditions
Ratings
min
typ
max
(–)100
(–)100
560*
Unit
nA
nA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO)/91098HA (KT)/51794TH (KOTO) BX-0238 No.4633–1/5

2SA1882S Related Products

2SA1882S 2SA1882-S 2SA1882-T 2SA1882-U 2SC4984S 2SC4984U 2SC4984-S 2SC4984-T 2SC4984-U
Description Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN Power Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP, 3 PIN
Objectid 1543500766 1543500766 1543500767 1543500768 1543500773 1543500775 1543500773 1543500774 1543500775
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 140 200 280 140 280 140 200 280
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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