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2N5250

Description
Power Bipolar Transistor, 90A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size279KB,2 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

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2N5250 Overview

Power Bipolar Transistor, 90A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,

2N5250 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)90 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-114
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment350 W
Maximum power dissipation(Abs)350 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max2.5 V
Base Number Matches1
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