2SC3183-M datasheet, PDF - EEWORLD Datasheet

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2SC3183-M: Description0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC3183-M Overview

0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SC3183-M Parametric

Parameter Name	Attribute value
Objectid	1483103595
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	800 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz

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Ordering number:ENN1251A

NPN Triple Diffused Planar Silicon Transistor

2SC3183

800V/0.2A Switching Regulator Applications

Features

· High breakdown voltage (V

CBO

≥900V).

· High-speed switching.

· Wide ASO.

Package Dimensions

unit:mm

2010C

[2SC3183]

10.2

3.6

5.1

4.5

1.3

2.7

18.0

5.6

1.2

0.8

14.0

15.1

6.3

0.4

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

PW≤300µs, Duty Cycle≤10%

Tc=25˚C

2.55

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220AB

Conditions

2.7

Ratings

900

800

0.2

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-to-Emitter Saturation Voltage

Symbol

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VCB=800V, IE=0

VEB=5V, IC=0

VCE=5V,

IC=20mA

IC=100mA

10*

2.0

Conditions

Ratings

min

typ

max

40*

Unit

µA

IC=100mA, IB=20mA

Continued on next page.

* : The h

1 of the 2SC3183 is classified as follows. When specifying the h

1 rank, specify two ranks or more in principle.

Rank

hFE

10 to 20

15 to 30

20 to 40

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51304TN (PC)/N3098HA (KT)/4217KI/9073KI, TS No.1251–1/4

2SC3183

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of May, 2004. Specifications and information herein are subject to

change without notice.

PS No.1251–4/4

2SC3183-M Related Products

	2SC3183-M	2SC3183M	2SC3183K	2SC3183-K	2SC3183L	2SC3183-L
Description	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Objectid	1483103595	1483103595	1483103584	1483103584	1483103591	1483103591
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	800 V	800 V	800 V	800 V	800 V	800 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	10	10	15	15
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	25 W	25 W	25 W	25 W	25 W	25 W
Maximum power dissipation(Abs)	25 W	25 W	25 W	25 W	25 W	25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz

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