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2SC3183L

Description
0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3183L Overview

0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SC3183L Parametric

Parameter NameAttribute value
Objectid1483103591
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment25 W
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Ordering number:ENN1251A
NPN Triple Diffused Planar Silicon Transistor
2SC3183
800V/0.2A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥900V).
· High-speed switching.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SC3183]
10.2
3.6
5.1
4.5
1.3
2.7
18.0
5.6
1.2
0.8
14.0
15.1
6.3
0.4
1
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Conditions
2.7
Ratings
900
800
7
0.2
1
25
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V,
VCE=5V,
IC=20mA
IC=100mA
10*
8
2.0
V
Conditions
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
IC=100mA, IB=20mA
Continued on next page.
* : The h
FE
1 of the 2SC3183 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
K
10 to 20
L
15 to 30
M
20 to 40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51304TN (PC)/N3098HA (KT)/4217KI/9073KI, TS No.1251–1/4

2SC3183L Related Products

2SC3183L 2SC3183M 2SC3183-M 2SC3183K 2SC3183-K 2SC3183-L
Description 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 0.2A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Objectid 1483103591 1483103595 1483103595 1483103584 1483103584 1483103591
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 800 V 800 V 800 V 800 V 800 V 800 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 20 20 10 10 15
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 25 W 25 W 25 W 25 W 25 W 25 W
Maximum power dissipation(Abs) 25 W 25 W 25 W 25 W 25 W 25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
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