2SB772-GR-BP datasheet, PDF - EEWORLD Datasheet

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2SB772-GR-BP: DescriptionPower Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size317KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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2SB772-GR-BP Overview

Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

2SB772-GR-BP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SIP
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-126
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SB772-R

2SB772-O

2SB772-Y

2SB772-GR

PNP Silicon

Plastic-Encapsulate

Transistor

Features

•

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Capable of 1.25Watts of Power Dissipation.

Collector-current 3.0A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

C to +150

Halogen

free available upon request by adding suffix "-HF"

Symbol

Parameter

Collector-Emitter Breakdown Voltage

=10mAdc, I

=0)

Collector-Base Breakdown Voltage

=100uAdc, I

=0)

Emitter-Base Breakdown Voltage

=100uAdc, I

=0)

Collector Cutoff Current

=40Vdc, I

=0)

Collector Cutoff Current

=30Vdc, I

Emitter Cutoff Current

=6.0Vdc, I

=0)

DC Current Gain

=1.0Adc, V

=2.0Vdc)

DC Current Gain

=100mAdc, V

=2.0Vdc)

Collector-Emitter Saturation Voltage

=2.0Adc, I

=0.2Adc)

Base-Emitter Saturation Voltage

=2.0Adc, I

=0.2Adc)

Transistor Frequency

=0.1Adc, V

=5.0Vdc, f=10MHz)

Min

5.0

---

Max

---

1.0

Units

Electrical Characteristics @ 25

C Unless Otherwise Specified

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CBO

CEO

EBO

Vdc

uAdc

ON CHARACTERISTICS

FE(1)

FE(2)

CE(sat)

BE(sat)

---

400

---

0.5

2.0

---

Vdc

DIMENSIONS

PIN 1.

PIN 2.

PIN 3.

EMITTER

COLLECTOR

BASE

SMALL-SIGNAL CHARACTERISTICS

---

MHz

CLASSIFICATION OF H

FE (1)

Rank

Range

60-120

100-200

160-320

200-400

Notes: 1.

High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

0.291

0.307

0.417

0.433

0.602

0.618

0.118

0.126

0.026

0.034

0.046

0.054

0.090TYP

0.098

0.114

0.083

0.091

0.000

0.012

0.043

0.059

0.018

0.024

7.40

7.80

10.60

11.00

15.30

15.70

3.90

4.10

3.00

3.20

0.66

0.86

1.17

1.37

2.290TYP

2.50

2.90

2.10

2.30

0.00

0.30

1.10

1.50

0.45

0.60

www.mccsemi.com

Revision:

1 of 2

2013/01/01

2SB772-GR-BP Related Products

	2SB772-GR-BP	2SB772-GR-BP-HF	2SB772-Y-BP-HF	2SB772-Y-BP	2SB772-O-BP	2SB772-O-BP-HF	2SB772-R-BP	2SB772-R-BP-HF
Description	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor,	Power Bipolar Transistor,	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor,	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	_compli	compli	compli	_compli	_compli	compli	_compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Humidity sensitivity level	1	1	1	1	1	1	1	1
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1	1

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