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2SB772-GR-BP-HF

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size317KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

2SB772-GR-BP-HF Overview

Power Bipolar Transistor,

2SB772-GR-BP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SB772-R
2SB772-O
2SB772-Y
2SB772-GR
PNP Silicon
Plastic-Encapsulate
Transistor

A
K
N
Features
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Halogen
free available upon request by adding suffix "-HF"
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=30Vdc, I
B=
0)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0Adc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Base-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Transistor Frequency
(I
C
=0.1Adc, V
CE
=5.0Vdc, f=10MHz)
Min
30
40
5.0
---
---
---
Max
---
---
---
1.0
1.0
1.0
Units
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
E
Vdc
Vdc
uAdc
uAdc
G
1
2
3
L

B
M




uAdc
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
C
60
32
---
---
400
---
0.5
2.0
---
---
Vdc
Vdc
J
DIMENSIONS
F
PIN 1.
PIN 2.
PIN 3.
Q
EMITTER
COLLECTOR
BASE
SMALL-SIGNAL CHARACTERISTICS
f
T
50
---
MHz










L
M
N
Q
CLASSIFICATION OF H
FE (1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
 





0.291
0.307
0.417
0.433
0.602
0.618
4
1
0.118
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.012
0.043
0.059
0.018
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

2SB772-GR-BP-HF Related Products

2SB772-GR-BP-HF 2SB772-GR-BP 2SB772-Y-BP-HF 2SB772-Y-BP 2SB772-O-BP 2SB772-O-BP-HF 2SB772-R-BP 2SB772-R-BP-HF
Description Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli _compli compli _compli _compli compli _compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1 1 1 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 1

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