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2SA1586-O

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size79KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
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2SA1586-O Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1586-O Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA1586
Elektronische Bauelemente
-0.15 A, -50 V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
High Voltage and High Current
Complementary to 2SC4116
Small Package
1
SOT-323
A
3
3
L
Top View
2
C B
1
2
APPLICATIONS
General Purpose Amplification
K
E
D
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1586-O
70~140
SO
2SA1586-Y
120~240
SY
2SA1586-GR(G)
200~400
SG
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch

Base
Collector

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-50
-50
-5
-150
100
1250
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-50
-50
-5
-
-
70
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
400
-0.3
-
7
Unit
V
V
V
A
A
Test Conditions
I
C
= -100A, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -100A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -6V, I
C
= -2mA
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -1mA
V
CB
= -10V, I
E
= 0, f = 1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Jan-2011 Rev. A
Page 1 of 1

2SA1586-O Related Products

2SA1586-O 2SA1586-O-C 2SA1586-Y 2SA1586-Y-C 2SA1586-GR 2SA1586-GR-C 2SA1586-GRG-C 2SA1586-GRG 2SA1586-C
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
package instruction ROHS COMPLIANT, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli compli compli compli compli compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 70 120 120 200 200 200 200 70
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP
surface mount YES YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1 1 1 1 -

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