2SA1586-Y datasheet, PDF - EEWORLD Datasheet

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2SA1586-Y: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size79KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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2SA1586-Y Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1586-Y Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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2SA1586

Elektronische Bauelemente

-0.15 A, -50 V

PNP Silicon Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



High DC Current Gain

High Voltage and High Current

Complementary to 2SC4116

Small Package

SOT-323

Top View

C B

APPLICATIONS



General Purpose Amplification

CLASSIFICATION OF h

Product-Rank

Range

Marking

2SA1586-O

70~140

2SA1586-Y

120~240

2SA1586-GR(G)

200~400

REF.

Millimeter

Min.

Max.

1.80

2.20

1.80

2.45

1.15

1.35

0.80

1.10

1.20

1.40

0.20

0.40

REF.

Millimeter

Min.

Max.

0.100 REF.

0.525 REF.

0.08

0.25

0.650 TYP.

PACKAGE INFORMATION

Package

SOT-323

MPQ

LeaderSize

7’ inch



Base

Collector





Emitter

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

Symbol

CBO

CEO

EBO

θJA

, T

STG

Ratings

-50

-5

-150

100

1250

150, -55~150

Unit

°C

/ W

°C

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown

Emitter to Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector to Emitter

Saturation Voltage

Transition Frequency

Collector Output Capacitance

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

Min.

-50

-5

Typ.

Max.

-100

400

-0.3

Unit

A

A

Test Conditions

= -100A, I

= 0

= -1mA, I

= 0

= -100A, I

= 0

= -50V, I

= 0

= -5V, I

= 0

= -6V, I

= -2mA

MHz

= -100mA, I

= -10mA

= -10V, I

= -1mA

= -10V, I

= 0, f = 1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Jan-2011 Rev. A

Page 1 of 1

2SA1586-Y Related Products

	2SA1586-Y	2SA1586-O	2SA1586-O-C	2SA1586-Y-C	2SA1586-GR	2SA1586-GR-C	2SA1586-GRG-C	2SA1586-GRG	2SA1586-C
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-3	ROHS COMPLIANT, PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	ROHS COMPLIANT, PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	70	70	120	200	200	200	200	70
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1	1	1	1	1	-

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