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FMM5826X

Description
Wide Band Medium Power Amplifier, 27000MHz Min, 30000MHz Max, 2.81 X 1.22 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size409KB,13 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric View All

FMM5826X Overview

Wide Band Medium Power Amplifier, 27000MHz Min, 30000MHz Max, 2.81 X 1.22 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE

FMM5826X Parametric

Parameter NameAttribute value
MakerSUMITOMO
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)21 dBm
Maximum operating frequency30000 MHz
Minimum operating frequency27000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
FMM5826X
Ka-Band Power Amplifier MMIC
FEATURES
•High Output Power; P1dB = 28 dBm (Typ.)
•High Linear Gain; GL = 21 dB(Typ.)
•Frequency Band ; 27.0 - 30.0 GHz
•High Linearity ; OIP3 = 37dBm(typ.)
•Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5826X is a power amplifier MMIC that contains a three-
stage amplifier, internally matched, for standard communications
band in the 27.0 to 30.0GHz frequency range. This product is well
suited for point-to-point radio and Ka-band V-SAT applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING(Ambient Temperature Ta=25℃)
Item
Symbol
Drain-Source Voltage
VDD
Gate-Source Voltage
VGG
Input Power
Pin
Storage Temperature
Tstg
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Operating Backside Temperature
Top
This product should be hermetically packaged.
Rating
10
-3
21
-55 ~ +125
Unit
V
V
dBm
Condition
≦7
≦12
-40 ~ +85
Unit
V
dBm
ELECTRICAL CHARACTERISTICS (Operating Backside Temperature Tc(op)=25℃)
Limits
Unit
Item
Symbol
Test Conditions
Min. Typ. Max.
Frequency Range
f
VDD=6V
27
-
30
GHz
Output Power at 1dB G.C.P.
P1dB
IDD(DC)=350mA(typ) 26.0 28.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
Zs=Zl=50ohm
17
20
-
dB
Power-added Efficiency at 1dB G.C.P.
Nadd
-
21
-
%
Third Order Intermodulation*
IM3*
-37
-40
-
dBc
*df=10MHz,
Drain Current at 1dB G.C.P.
Iddrf
-
500
700
mA
Po=17dBm (S.C.L.)
Input Return Loss (at Pin=-20dBm)
RLin
-
-8
-
dB
Output Return Loss (at Pin=-20dBm)
RLout
-
-8
-
dB
Note : RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
ESD
Class 0
~ 199V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
January 2006
1
http://www.eudyna.com/
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