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2SC1740S-S

Description
Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size72KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

2SC1740S-S Overview

Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92S, 3 PIN

2SC1740S-S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
ConfigurationSINGLE
Minimum DC current gain (hFE)270
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SC1740S
2SC1740S-Q
2SC1740S-R
2SC1740S-S
NPN
Plastic-Encapsulate
Transistors
TO-92S
A
E
Features
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Power dissipation: P
CM
= 0.3W(T
amb
=25 )
Collector current: I
CM
= 0.15A
Collector-base voltage: V
(BR)CBO
= 60V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to + 150
Electrical Characteristics @ 25
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Unless Otherwise Specified
Min
50
60
7.0
---
---
120
---
100
Typ
---
---
---
---
---
---
---
---
Max
---
---
---
0.1
0.1
560
0.4
---
Unit
V
V
V
­A
­A
---
V
MHz
Parameter
Collector-Emitter Voltage
(I
C
=-50­A, I
E
=0)
Collector-Base Voltage
(I
C
=-1­A, I
B
=0)
Emitter-Base Voltage
(I
E
=-50­A, I
C
=0)
Collector cut-off Current
(V
CB
=-20V, I
E
=0)
Emitter cut-off Current
(V
EB
=-5V, I
C
=0)
DC current gain
(V
CE
=-2V, I
C
=-0.1A)
Collector-Emitter Saturation Voltage
(I
C
=-2A, I
B
=-0.1A)
Transition Frequency
(V
CE
=2.0Vdc, I
C
=0.5Adc)
B
C
CLASSIFICATION OF h
FE
Rank
Range
Q
120-270
R
180-390
S
270-560
1
2
3
D
1.EMITTER
2.COLLECTOR
3.BASE
G
DIMENSIONS
INCHES
MIN
MAX
.16
.12
.59
---
.02
.08
.20
MM
MIN
4.00
3.00
15.00
0.45
2.00
5.00
---
MAX
NOTE
DIM
A
B
C
D
E
G
www.mccsemi.com
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Revision: 3
2007/03/02

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