General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2.
Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
Dimensions
(Unit : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95
1.9
2.9
1.3
2.0
(1)
(2)
0.2
0.5 0.5
(3)
0.4
(3)
0.3
1.6
2.1
0.8
0.2
Structure
Epitaxial planar type
NPN silicon transistor
2.8
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
0~0.1
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
2SC1740S
4±0.2
2±0.2
3±0.2
0.2
1.2
0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13
0~0.1
0.5
0.45+0.15
−
0.05
0.15Max.
5
3Min.
2.5 +0.4
−
0.1
0.5
+0.15
0.45
−
0.05
(1) (2) (3)
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes h
FE
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
−55
to
+150
°C
°C
W
Unit
V
V
V
A
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.04 - Rev.B
0.7
1.0
1.6
(2)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Data Sheet
Packaging specifications and h
FE
Package
Code
Type
2SC2412K
2SC4081
2SC4617
2SC5658
2SC1740S
h
FE
QRS
QRS
QRS
QRS
QRS
−
−
−
−
−
−
−
−
−
−
Basic ordering
unit (pieces)
T146
3000
T106
3000
−
Taping
TL
3000
−
−
T2L
8000
−
−
−
TP
5000
−
−
−
−
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
S
270 to 560
Electrical characterristic curves
50
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
80
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
0.50mA
mA
0.45
A
0.40m
0.35mA
0.30mA
10
Ta=25°C
30µA
27µA
8
24µA
21µA
60
0.25mA
0.20mA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
40
0.15mA
0.10mA
4
12µA
9µA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
2
6µA
3µA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics (
Ι
)
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=25°C
500
Ta=100°C
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
V
CE
=5V
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
200
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.04 - Rev.B
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
500
Data Sheet
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.5
Ta=25°C
500
Ta=100°C
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
V
CE
=5V
Ta=25°C
DC CURRENT GAIN : h
FE
200
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
20
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
10
Cib
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25°C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant
vs. emitter current
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2009.04 - Rev.B
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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