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2SC2412KT146

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size171KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC2412KT146 Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN

2SC2412KT146 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Base Number Matches1
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2.
Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
Dimensions
(Unit : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95
1.9
2.9
1.3
2.0
(1)
(2)
0.2
0.5 0.5
(3)
0.4
(3)
0.3
1.6
2.1
0.8
0.2
Structure
Epitaxial planar type
NPN silicon transistor
2.8
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
0~0.1
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
2SC1740S
4±0.2
2±0.2
3±0.2
0.2
1.2
0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13
0~0.1
0.5
0.45+0.15
0.05
0.15Max.
5
3Min.
2.5 +0.4
0.1
0.5
+0.15
0.45
0.05
(1) (2) (3)
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes h
FE
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
−55
to
+150
°C
°C
W
Unit
V
V
V
A
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
560
0.4
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.04 - Rev.B
0.7
1.0
1.6
(2)

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Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, SC-75A, 3 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code SC-59 SC-72 SC-105 SC-70 SC-75A
package instruction SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 120 120 120
JESD-30 code R-PDSO-G3 R-PSIP-T3 R-PDSO-F3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 e1 e2 e1 e1
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING THROUGH-HOLE FLAT GULL WING GULL WING
Terminal location DUAL SINGLE DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz 180 MHz 180 MHz
Base Number Matches 1 1 1 1 1
Humidity sensitivity level 1 - 1 1 1
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
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