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2SC4944-Y(T5RMAA,F

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size246KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4944-Y(T5RMAA,F Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

2SC4944-Y(T5RMAA,F Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SC4944
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC4944
Audio Frequency General Purpose Amplefier Applications
Small package (dual type)
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Complementary to 2SA1873
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
60
50
5
150
30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2L1A
Note:
Weight: 6.2 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-07
1
2014-03-01

2SC4944-Y(T5RMAA,F Related Products

2SC4944-Y(T5RMAA,F 2SC4944-Y(T5LNSEIF 2SC4944-GR(TE85L,F 2SC4944-Y(TE85L,F)
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon TRANS NPN 50V 0.15A USV TRANS 2NPN 50V 0.15A USV
Reach Compliance Code unknow unknow - unknown
Maximum collector current (IC) 0.15 A 0.15 A - 0.15 A
Minimum DC current gain (hFE) 120 120 - 120
Polarity/channel type NPN NPN - NPN
surface mount YES YES - YES
Nominal transition frequency (fT) 80 MHz 80 MHz - 80 MHz
Base Number Matches 1 1 - 1

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