Transistors
2SD1205, 2SD1205A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
6.9
±0.1
Unit: mm
2.5
±0.1
(1.0)
(0.4)
•
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: h
FE
=
4 000
to 20 000.
•
A shunt resistor is omitted from the driver.
•
M type package allowing easy automatic and manual insertion as well as
stand-alone fixing to the printed circuit board.
(1.5)
3.5
±0.1
(1.0)
2.0
±0.2
2.4
±0.2
0.45
±0.05
1
■
Features
(1.5)
R 0.9
R 0.7
1.0
±0.1
Parameter
Collector-base voltage
(Emitter open)
2SD1205
2SD1205A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
30
60
25
50
5
500
750
400
150
−55
to
+150
Unit
V
3
(2.5)
2
(2.5)
1.25
±0.05
■
Absolute Maximum Ratings
T
a
=
25°C
(0.85)
0.55
±0.1
Collector-emitter voltage 2SD1205
(Base open)
2SD1205A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
1: Base
2: Collector
3: Emitter
M-A1 Package
V
mA
mA
mW
°C
°C
Internal Connection
C
B
≈
200
Ω
E
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SD1205
2SD1205A
2SD1205
2SD1205A
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
I
E
=
100
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
0.5 mA
I
C
=
500 mA, I
B
=
0.5 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
150
4 000
V
CEO
I
C
=
1 mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
=
100
µA,
I
E
=
0
Min
30
60
25
50
5
100
100
20 000
2.5
3
V
nA
nA
V
V
MHz
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
4 000 to 10 000 8 000 to 20 000
4.1
±0.2
4.5
±0.1
Publication date: December 2002
SJC00211BED
1
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•
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2002 JUL
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