BT139-600G0T
4Q Triac
14 May 2015
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in
general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High voltage capability
Least sensitive gate for highest noise immunity
High minimum IGT for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
T(RMS)
I
TSM
Quick reference data
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 125 °C;
Fig. 1;
Fig. 2; Fig. 3
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
-
-
150
°C
-
-
-
-
155
170
A
A
Conditions
Min
-
-
Typ
-
-
Max
600
16
Unit
V
A
Static characteristics
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
10
-
50
mA
10
-
50
mA
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TO
-2
20A
B
NXP Semiconductors
BT139-600G0T
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
10
10
-
-
Typ
-
-
-
1.2
Max
50
100
60
1.6
Unit
mA
mA
mA
V
I
H
V
T
dV
D
/dt
holding current
on-state voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 20 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Dynamic characteristics
rate of rise of off-state
voltage
rate of change of
commutating current
200
-
-
V/µs
dI
com
/dt
2
8
-
A/ms
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT139-600G0T
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BT139-600G0T
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
2 / 14
NXP Semiconductors
BT139-600G0T
4Q Triac
7. Marking
Table 4.
Marking codes
Marking code
BT139-600G0T
Type number
BT139-600G0T
BT139-600G0T
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
3 / 14
NXP Semiconductors
BT139-600G0T
4Q Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 125 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
150
150
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT139-600G0T
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
4 / 14
NXP Semiconductors
BT139-600G0T
4Q Triac
20
I
T(RMS)
(A)
16
aaa-016268
30
I
T(RMS)
(A)
26
aaa-016262
125 °C
12
22
8
18
4
14
0
-50
0
50
100
T
mb
(°C)
150
10
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
25
f = 50 Hz; T
mb
= 125 °C
RMS on-state current as a function of surge
duration; maximum values
aaa-016263
95
T
mb(max)
(°C)
101
P
tot
(W)
20
α = 180 °C
120 °C
90 °C
15
60 °C
30 °C
conduction
angle
(degrees)
30
60
90
120
180
0
4
8
12
16
form
factor
a
4
2.8
2.2
1.9
1.57
20
α
107
10
113
5
119
0
I
T(RMS)
(A)
125
24
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT139-600G0T
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
5 / 14
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